Improved structural and optical properties of β-Ga2O3 films by face-to-face annealing

Synthesis, mechanism and characterization of urchin-like Ga2O3 microspheres

“…As the reaction time increases, the absorption edge shifts to a longer wavelength and then a shorter wavelength. As a direct band gap semiconductor material, the optical band gap ( E g ) can be calculated via the adsorption spectra using a Tauc plot according to the following equation: 59–61 ( αhν ) 2 = A ( hν − E g )where α is the absorption coefficient, hν is the incident photon energy, and A is a constant. The E g of the Ga 2 O 3 microspheres can be extracted by extrapolating the linear region of ( αhν ) 2 to hν , as shown in Fig.…”

“…As the reaction time increases, the absorption edge shifts to a longer wavelength and then a shorter wavelength. As a direct band gap semiconductor material, the optical band gap (E g ) can be calculated via the adsorption spectra using a Tauc plot according to the following equation: [59][60][61] (αhν) 2…”

High-quality β-(AlxGa1−x)2O3 thin films on sapphire substrates by face-to-face annealing

“…[13][14][15][16] Similarly, there have been few reports that the face-to-face annealing of Ga 2 O 3 thin films on sapphire substrates at 800 °C for 2 hours would improve the film smoothness and crystalline quality. 17,18 However, there are currently a lack of reports on the preparation of (Al x Ga 1−x ) 2 O 3 films through the face-to-face annealing method at high temperatures (>1000 °C). It is believed that annealing the Ga 2 O 3 films on a sapphire substrate in a face-to-face configuration can help suppress the thermal decomposition of Ga 2 O 3 at high temperatures while facilitating the infiltration of Al elements from both sides of the substrates into the Ga 2 O 3 film, which produces uniform high-Al composition (Al x Ga 1−x ) 2 O 3 films.…”

Photoelectric Generation Coefficient of B‐Gallium Oxide during Exposure to High‐Energy Ionizing Radiation

“…While not new to the scientific community, gallium oxide grasped the attention of many researchers in the past two decades. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] The reason for much of the interest lies in this material's potential for offering solutions to challenges in niche markets. No perfect semiconductor exists for every application.…”