Improved Tauc-Lorentz model: Impacts of roughness/additional oscillator(s) on determination of optical properties of HfO2 films

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO2 Ferroelectric Films

“…Ferroelectric materials are of increasing technological importance having continuously extending applications including ferroelectric random-access memories , for storage, sensors and actuators, , optics, , and electronic devices for neuro-inspired electronics such as memristors, necessary for building up electronic synapses for neuromorphic computing. − Recently discovered ferroelectricity in doped hafnia ultrathin films opens new perspectives for the realization of special devices like ferroelectric field-effect transistors and ferroelectric tunnel junctions , due to their compatibility with the Si technology.…”