Improved Tellurium Films by Partially Ionized Vapor Deposition as the Semiconductor Layer of a TFT and a Hydrogen Sensor

Abstract

Semiconducting properties of tellurium films prepared on glass substrate by a partially ionized vapor deposition (PIVD) technique were studied and compared with those of Te films formed by a conventional vacuum evaporation technique. It was found that the PIVD technique effectively increased the Hall mobility and decreased the carrier concentration of Te films. These improved films could be utilized as the semiconductor layer of a thin film transistor(TFT) with smaller pinch-off voltage. A Te TFT with 10 nm-thick paladium film as the gate electrode was fabricated and its sensitivity to hydrogen gas was examined.

Nano-structured crystalline Te films by laser gas-phase pyrolysis of dimethyl tellurium

“…They find interesting applications (e.g. as shields in passive radiative cooling [1], gas sensors [2,3] and in optical information storage [4]). The reliability of the tellurium films exposed to atmosphere is, however, decreased by oxidation [5].…”

Polymer-stabilized nano-sized tellurium films by laser-induced chemical vapour co-deposition process

“…13 The semiconducting properties of Te films also enable these films to be used in thin film transistors that can operate as a hydrogen sensor. 14 Thin tellurium films on polymethylmethacrylate are very attractive materials for optical information storage, 15 since they are extremely sensitive to laser micromachining.…”

A solvothermal route to tellurium based thin films

“…They are widely used in many applications, including shields in passive radiative cooling [1], gas sensors [2,3], optical information storage [4], IR-detectors, contacts between the solar cells and electrical contacts. One-dimensional (1D) nanostructured tellurium thin films are of particular interest because the optical and electrical properties of devices strongly depend on the thin film microstructures, due to their quantum confinement effect.…”