Improved temperature stability of Mo/Si multilayers by carbide based diffusion barriers through implantation of low energy CHx+ ions

Thermal stability studies of short period Sc/Cr and Sc/B4C/Cr multilayers

“…Such interlayers also increase thermal stability as was demonstrated in previous studies [31][32][33][34][35]. We note that there are other ways to increase thermal stability.…”

Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

“…SiC has been applied as a material for high-temperature resistant coatings, hard coatings and wear resistant coatings [1][2][3]. In the past we demonstrated the applicability of carbon implantation for the formation of SiC interlayers to improve the temperature stability of Mo/Si multilayer systems to be applied in 13.5 nm lithography [4]. Our interest in SiC/Si multilayered periodical systems also concerns the application as selective or broad band reflecting systems, to be applied in the XUV (in this work 20-80 nm) range, including pulsed applications in the femto/ atto-second range [5].…”

Optics and Multilayer Coatings for EUVL Systems

“…For example, it has been shown that the period thickness of Mo-Si MLs shrinks considerably after annealing at 300° C, but measurable change in EUV reflectivity already occurs at or above 100°C. 55,56,59,66 Thermal stability can be substantially improved by introducing diffusion barriers such as carbon (C) and boron carbide (B 4 C) as discussed above, other carbide-based diffusion layers, 67 SiO 2 , 68 or by using a different ML material pair such as Mo 2 C/Si, MoSi 2 /Si, 56,57,54,69 or Mo/SiC. 69,70 Thermally stable MLs have recently been demonstrated on actual EUVL collector optics.…”