Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design

Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

“…13 Using flexible graphene quilts precisely transferred over the drain contacts, Yan et al demonstrated lowering the hotspot temperature by as much as 20 C. 14 Various flip-chip bonding techniques have also been shown to be effective in improving thermal performance of AlGaN/GaN HEMTs. 15,16 In this Letter, we report dramatic reduction of thermal resistance in AlGaN/ GaN MMC HEMTs fabricated on sapphire substrates. Our structure-based approach offers an alternative avenue in mitigating self-heating problems in AlGaN/GaN HEMTs.…”

Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances

“…It should also be noted that recent reports show how the problem of poor thermal conduction via the substrate can be overcome by using front-side cooling techniques [34], [35]. Moreover, the thermal performance of the substrate, which can be a serious problem in continuous-wave mode, tends to be less of a limiting factor when the HEMTs are operated in pulsed mode [36].…”

A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate

“…Hence, a metal with a high thermal conductivity must be used in the interconnection. To measure experimentally the temperature distribution within the HEMT, an infrared (IR) thermographic system with micro-Raman spectroscopy was adopted and the IR radiation of the device was detected using a Neo Thermal TVS-700 detector [9,10]. The channel temperature map was obtained from the IRradiation intensity following emissivity calibration, which was performed for the unpowered device at various I DS .…”