Improved Thermoelectric Performance Achieved by Regulating Heterogeneous Phase in Half-Heusler TiNiSn-Based Materials

Chen, Jun Liang; Liu, Chengyan; Liu, Miao; Gao, Jie; Zheng, Yan; Wang, Xiaoyang; Lu, Jiacai; Shu, Mingzheng

doi:10.1007/s11664-017-6013-8

Cited by 5 publications

(1 citation statement)

References 27 publications

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“…Until now, many methods have been employed to synthesize MNiSn (M = Ti, Zr, Hf) alloys, such as arc melting, levitation melting, a solid-state reaction, a microwave method, and mechanical alloying . However, it is difficult to synthesize the pure phase of half-Heusler alloy TiNiSn directly, which shows a narrow phase-stability window according to the TiNiSn phase diagram .…”

Section: Introductionmentioning

confidence: 99%

Strategy of Extra Zr Doping on the Enhancement of Thermoelectric Performance for TiZr_xNiSn Synthesized by a Modified Solid-State Reaction

Chen

Hai-bin

Liu

et al. 2021

ACS Appl. Mater. Interfaces

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Half-Heusler alloys, which possess the advantages of high thermal stability, large power factor and good mechanical property, have been attracted increasing interest in mid-temperature thermoelectric application. In this work, the extra Zr-doped TiZr x NiSn samples were successfully prepared by a modi ed solid-state reaction followed by spark plasma sintering. It demonstrates that extra Zr doping could not only improve the power factor on account of an increase in Seebeck coe cient but also suppress the lattice thermal conductivity originated from the strengthened phonon scattering by the superlattice nanodomains and the secondary nanoparticles. As a consequence, an increased power factor of 3.29 mW m − 1 K − 2 and a decreased lattice thermal conductivity of 1.74 W m − 1 K − 1 are achieved in TiZr 0.015 NiSn, leading to a peak ZT as high as 0.88 at 773 K and an average ZT value up to 0.62 in the temperature range of 373 − 773 K. This work gives a guidance for optimizing the thermoelectric performance of TiNiSn-based alloys by modulating the microstructures on the secondary nanophases and superlattice nanodomains.

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Section: Introductionmentioning

confidence: 99%

Strategy of Extra Zr Doping on the Enhancement of Thermoelectric Performance for TiZr_xNiSn Synthesized by a Modified Solid-State Reaction

Chen

Hai-bin

Liu

et al. 2021

ACS Appl. Mater. Interfaces

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Review of Recent Progresses in Thermoelectric Materials

Giri

Nain

2021

Lecture Notes in Mechanical Engineering

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Processing and Thermoelectric Properties of TiNiSn Materials: A Review

Young

Reddy

2019

J. of Materi Eng and Perform

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The half-Heusler alloy TiNiSn is a promising material for high-temperature thermoelectric applications due to its good thermal stability and semiconductor-like electrical properties. Numerous synthesis techniques have been utilized to make TiNiSn, but a comparative study on its thermoelectric properties with respect to processing parameters has not been reported. Based on published experimental data, primary melting methods, such as arc melting or induction levitation melting, do not have a noticeable effect on the final thermoelectric properties, although choice of densification technique and annealing parameters correlate with each thermoelectric property. Thermal conductivity (2.47-6.08 W/m K), governed by lattice scattering effects, was maximized with high density from the spark plasma sintering (SPS) technique as well with low inclusions of metallic impurities and interstitial Ni defects from low-temperature, non-densified processes. Electrical resistivity (4.75-30 lX m), inversely related to thermal conductivity, is minimized when density is maximized and chemical defects are favorable from using SPS. All reported TiNiSn alloys contain intermetallic impurities, imparting a global trend of lowered electrical resistivity. Seebeck coefficient (2 273.20 to 2 50.71 lV/K), proportional to electrical resistivity, is maximized when charge carrier concentration is minimized by eliminating phase impurities and Ni defects. Porosity has been observed to scatter low-energy electrons, which can increase Seebeck coefficient and electrical resistivity, although no statistical significance is found. An ideal TiNiSn alloy should have intermediate values of all interconnected thermoelectric properties to maximize ZT. Future research work should strive to include quantitative phase analysis to better characterize the contributions of Ni defects and impurity phases toward thermoelectric properties.

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Improved Thermoelectric Performance Achieved by Regulating Heterogeneous Phase in Half-Heusler TiNiSn-Based Materials

Cited by 5 publications

References 27 publications

Strategy of Extra Zr Doping on the Enhancement of Thermoelectric Performance for TiZr_xNiSn Synthesized by a Modified Solid-State Reaction

Strategy of Extra Zr Doping on the Enhancement of Thermoelectric Performance for TiZr_xNiSn Synthesized by a Modified Solid-State Reaction

Review of Recent Progresses in Thermoelectric Materials

Processing and Thermoelectric Properties of TiNiSn Materials: A Review

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Improved Thermoelectric Performance Achieved by Regulating Heterogeneous Phase in Half-Heusler TiNiSn-Based Materials

Cited by 5 publications

References 27 publications

Strategy of Extra Zr Doping on the Enhancement of Thermoelectric Performance for TiZrxNiSn Synthesized by a Modified Solid-State Reaction

Strategy of Extra Zr Doping on the Enhancement of Thermoelectric Performance for TiZrxNiSn Synthesized by a Modified Solid-State Reaction

Review of Recent Progresses in Thermoelectric Materials

Processing and Thermoelectric Properties of TiNiSn Materials: A Review

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Product

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Strategy of Extra Zr Doping on the Enhancement of Thermoelectric Performance for TiZr_xNiSn Synthesized by a Modified Solid-State Reaction

Strategy of Extra Zr Doping on the Enhancement of Thermoelectric Performance for TiZr_xNiSn Synthesized by a Modified Solid-State Reaction