the system with weak electron-phonon coupling, the lattice contribution to the thermal conductivity, κ l , can be treated as an independent parameter, since the other transport factors are purely electron dependent. [8][9][10] Some schemes, such as nanostructures and defect engineering, have been implemented to reduce the lattice thermal conductivity by enhancing phonon scattering. [11,12] It is noticeable that the effect of electron-phonon coupling in some systems is significant and complicated. In n-type SnSe, the electron-phonon coupling reduces the carrier mobility by 80%, as the lattice a is slightly enlarged. [13] In p-type silicon, the electronphonon coupling would reduce the lattice thermal conductivity by 45%, when carrier concentration goes above 10 19 cm −3 . [14] On the other hand, the coupling between electronic conductivity and Seebeck coefficient is more intrinsic, as they exhibit the opposite dependence on carrier concentration and electronic effective mass. [15,16] Band engineering was proved to be an effective strategy to optimize the power factor, PF = S 2 σ, by reconstructing the geometry of the band structure near Fermi level. [17][18][19][20][21] P-type PbTe is one of the most representative examples of the band engineering. [21][22][23][24][25] By introducing certain dopants, such as Mg, Mn, Sr, Cd, Eu, the energy distance between the light valence band and the heavy valence band of PbTe can be largely reduced. Such "band convergence" increases the Seebeck coefficient while the electrical conductivity is much less affected. [21,[26][27][28][29][30] The success of band engineering causes PbTe to be one of the most outstanding thermoelectric families. Band convergence in PbSe, however, was found to be difficult to achieve, although it shows a similar two-valley valence band structure to PbTe. [31] The energy difference between the light and heavy bands of PbSe is about 0.5 eV, compared with 0.2 eV for PbTe. [30,[32][33][34] The lower thermoelectric performance of PbSe relative to PbTe was attributed to the intrinsic electronic structure of PbSe. [34] To tune the band structure of p-type PbSe, many different dopants have been examined. [9,23,31,[35][36][37] It was found that some dopants, such as Hg and Sr, show a weak band engineering effect. [36][37][38] With Hg doping, the Seebeck coefficient is largely enhanced at high temperatures, while the enhancement at room-temperature is nearly invisible. This phenomenon reflects PbSe has been expected to be a competitor of the excellent thermoelectric material PbTe, whereas its performance has proved to be limited by its intrinsic electronic structure. In this work, the improved thermoelectric performance of PbSe originating in the novel spin-orbit coupling effect is reported. By alloying with NaSbSe 2 , valence band convergence and bandgap enlargement are achieved in PbSe, resulting in a significantly enlarged Seebeck coefficient. Theoretical calculations indicate that a modified electronic structure by spin-orbit coupling would lead to exotic ther...