Improved third-order optical nonlinearities in Ag/MoS2 Schottky-type nano/hetero-junctions

Ebrahimzadeh, Mina; Haghighatzadeh, Azadeh; Dutta, Joydeep

doi:10.1016/j.optlastec.2021.107092

Cited by 26 publications

(3 citation statements)

References 74 publications

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“…In fact, most of the metals (even ITO) form Schottky contacts with MoS 2 . [40,[84][85][86] The J-V characteristic of Figure 6a shows that the PD generates a relatively high photocurrent density (J Ph = J light −J dark ) of ≈4.3 mA.cm −2 with an applied voltage as low as 1 V. This clearly shows the very high photosensitivity of our MoS 2 films. By comparing the J Ph of all samples, as a function of their T d , Figure 6b shows that the generated photocurrent density (black curve) is strongly dependent on T d , with a "bell" shape type of variation.…”

Section: Resultsmentioning

confidence: 96%

Tuning the Optoelectronic Properties of Pulsed Laser Deposited “3D”‐MoS₂ Films via the Degree of Vertical Alignment of Their Constituting Layers

Mouloua,

LeBlanc‐Lavoie,

Pichon

et al. 2024

Advanced Optical Materials

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Pulsed‐laser‐deposition (PLD) is used to deposit MoS2 thin films at substrate temperatures (Td) ranging from 25 to 700 °C. A Td = 500 °C is identified as the optimal temperature that yields MoS2 films consisting of highly‐crystallized 2H‐MoS2 phase with a strong (002) preferential orientation, a direct optical bandgap (Eg) of ∼1.4 eV and a strong photoresponse of ∼1500%. Raman spectroscopy revealed that the degree of vertical alignment of MoS2 layers in the films also reaches its maximum at Td = 500 °C. High‐resolution‐transmission‐electron‐microscopy has provided a clear‐cut evidence that the PLD‐MoS2 films predominantly consist of vertically aligned MoS2 layers over all the film thickness of ∼90 nm, enabling those “3D” films to behave as a direct‐bandgap “2D‐MoS2” with exceptional optoelectronic properties. Indeed, at Td = 500 °C, the PLD‐MoS2 based photodetectors (PDs) devices are shown to exhibit the highest responsivity (R) and detectivity (D*) values (125 mA W−1 and 9.2 × 109 Jones, respectively) ever reported for large area (≥ 1 cm2) MoS2‐based PDs operating at a voltage as low as 1 V. For the first time, a constant‐plus‐linear relationship between Eg, R, and D* of the PDs and the degree of vertical alignment of the MoS2 layers is established. Such a correlation is fundamental for the controlled growth of PLD‐MoS2 films and the tuning of their properties in view of their integration with standard large‐scale‐integration processing.

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Section: Resultsmentioning

confidence: 96%

Tuning the Optoelectronic Properties of Pulsed Laser Deposited “3D”‐MoS₂ Films via the Degree of Vertical Alignment of Their Constituting Layers

Mouloua,

LeBlanc‐Lavoie,

Pichon

et al. 2024

Advanced Optical Materials

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“…Their research has promoted the development of nonlinear photonic devices based on plasma and provided a feasible approach for the NLA engineering of metal−semiconductor structures. Ebrahimzadeh et al 32 prepared a Ag/MoS 2 nano/heterojunction using a twostep synthesis method. The third-order NLO properties are investigated at a 532 nm excitation wavelength.…”

Section: Introductionmentioning

confidence: 99%

Photogenerated Carrier Separation and Localized Surface Plasmon Resonance in MoS₂/Metal Nanocomposites: Implications for Photoelectric Devices

Shi,

Li,

Cao

et al. 2024

ACS Appl. Nano Mater.

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Integrating noble metals with semiconductors is a viable approach to enhancing the photoelectric conversion efficiency of samples. The combination of metals with semiconductors has found widespread application in the field of optoelectronics and devices. Herein, metal (M = Ag/Cu) and MoS 2 (MoS 2 /M) nanocomposites were successfully synthesized using magnetron sputtering and hydrothermal two-step methods. The sizes and morphologies of the metals can be adjusted by controlling the sputtering time. Metals Ag and Cu were anchored onto defective MoS 2 nanomaterials, serving as photoanodes and light absorbers, respectively. The vacancy-induced defect structure, along with the synergistic effect of the interface and size, can simultaneously regulate the charge-carrier dynamics and the band structure of MoS 2 /M nanocomposites. The transient photocurrent responses and the electrochemical impedance spectroscopy results demonstrate the excellent photoelectrochemical (PEC) properties of the MoS 2 /M nanocomposites. A finite-difference timedomain simulation reveals that the strong plasmonic electromagnetic field generated by metal can significantly enhance the energyband transition rate of neighboring materials and improve photogenerated carrier separation. Compared with pure MoS 2 , MoS 2 /M nanocomposites exhibit enhanced nonlinear-optical (NLO) behavior. This improvement stems from an effective charge separation, which is facilitated by a synergistic interaction between the electric field and the plasmonic magnetic field. Density functional theory calculations indicate a decrease in the energy of the Mo d orbital, which contributes to the acceptance of d electrons from Ag/Cu. The exceptional performance of MoS 2 /M nanocomposites is primarily attributed to the occupancy of Mo d orbitals, driven by the intense interaction among MoS 2 and Ag/Cu optimal combination. This work offers valuable insights into the design of heterojunctions with abundant surface/interface contact and defect features to enhance tunable electron-transfer kinetics. Such advancements pave the way for achieving a high NLO conversion efficiency and the development of efficient PEC anode materials.

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“…Nanotechnology involves the design, fabrication, and application of a broad range of small-sized nanostructures including quantum wells, wires, and dots 1 – 4 Due to their promising features, low-dimensional quantum wells have found a prominent position in telecommunications, micro/electronic systems, solar cells, and quantum computers 5 , 6 . Stronger confinement of charge carriers in these low-dimensional systems has resulted in interesting physical properties compared with other nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Linear and nonlinear optical properties of laser-dressed V-shaped gallium arsenide/gallium arsenide antimonide/gallium arsenide quantum wells with different dressing parameters: a theoretical modeling

Maleki,

Haghighatzadeh,

Attarzadeh

2024

J. Nanophoton.

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A single GaAs/GaAsSb/GaAs quantum well having a valence band profile was described in this study using the V-shaped potential. An external static electric field (E-field) and a high-frequency intense laser irradiation were utilized to examine the first-order linear and third-order nonlinear optical properties. The theoretical modeling was achieved using a compact-density matrix and iterative process in a two-level system framework. The position-dependent effective mass approximation was applied to solve the Schrödinger equation and evaluating the energy states and their corresponding wavefunctions for the two lowest bound states within the quantum well's valence band with regards to a heavy hole. We extended the investigation of the single V-shaped potential by incorporating the effects of the E-field, the well's half-width, and antimony (Sb) content on optical characteristics. The study on the combined effects of the intense laser field and the mentioned factors revealed that the peak positions and amplitudes of the linear and nonlinear optical characteristics were strongly influenced by variation in the laser strength. Specifically, we observed, that under higher laser dressing parameters, the application of the electric field played an important role. This occurred when the impact of the well's half-width and Sb content became prominent at values of lower laser-dressing parameters. It is significant to note that our findings will have potential real-world applications in photonics, optoelectronics, and related areas.

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Improved third-order optical nonlinearities in Ag/MoS2 Schottky-type nano/hetero-junctions

Cited by 26 publications

References 74 publications

Tuning the Optoelectronic Properties of Pulsed Laser Deposited “3D”‐MoS₂ Films via the Degree of Vertical Alignment of Their Constituting Layers

Tuning the Optoelectronic Properties of Pulsed Laser Deposited “3D”‐MoS₂ Films via the Degree of Vertical Alignment of Their Constituting Layers

Photogenerated Carrier Separation and Localized Surface Plasmon Resonance in MoS₂/Metal Nanocomposites: Implications for Photoelectric Devices

Linear and nonlinear optical properties of laser-dressed V-shaped gallium arsenide/gallium arsenide antimonide/gallium arsenide quantum wells with different dressing parameters: a theoretical modeling

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Improved third-order optical nonlinearities in Ag/MoS2 Schottky-type nano/hetero-junctions

Cited by 26 publications

References 74 publications

Tuning the Optoelectronic Properties of Pulsed Laser Deposited “3D”‐MoS2 Films via the Degree of Vertical Alignment of Their Constituting Layers

Tuning the Optoelectronic Properties of Pulsed Laser Deposited “3D”‐MoS2 Films via the Degree of Vertical Alignment of Their Constituting Layers

Photogenerated Carrier Separation and Localized Surface Plasmon Resonance in MoS2/Metal Nanocomposites: Implications for Photoelectric Devices

Linear and nonlinear optical properties of laser-dressed V-shaped gallium arsenide/gallium arsenide antimonide/gallium arsenide quantum wells with different dressing parameters: a theoretical modeling

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Tuning the Optoelectronic Properties of Pulsed Laser Deposited “3D”‐MoS₂ Films via the Degree of Vertical Alignment of Their Constituting Layers

Tuning the Optoelectronic Properties of Pulsed Laser Deposited “3D”‐MoS₂ Films via the Degree of Vertical Alignment of Their Constituting Layers

Photogenerated Carrier Separation and Localized Surface Plasmon Resonance in MoS₂/Metal Nanocomposites: Implications for Photoelectric Devices