Improved β-Ga2O3 Solar-Blind Deep-Ultraviolet Thin-Film Transistor Based on Si-Doping

Shen, Linwei; Pan, Xinhua; Zhang, Tao; Liu, Yunze; Wang, Ning; Wang, Peng; Wang, Fengzhi; Zhu, Guangmin; Wang, Jiangbo; Ye, Zhizhen

doi:10.1007/s11664-022-09599-3

Cited by 11 publications

(2 citation statements)

References 45 publications

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“…This incorporation makes the entire device transparent in the DUV region, further distinguishing our TFT from other reported ones (Table S1, Supporting Information). [26][27][28][29][30][31][32][33][34][35]…”

Section: Transistor Properties Of Sso Tftsmentioning

confidence: 99%

“…In 2020, the metal‐insulator‐semiconductor (MIS) configuration of SrSnO 3 ‐based FET with the field effect mobility of ≈14 cm 2 V −1 s −1 was reported, albeit with a low on/off ratio of ≈10 2 . [ 26 ] Additionally, there are some reports demonstrating TFTs based on other semiconductors with ultra‐wide bandgaps, including amorphous Ga 2 O 3 , [ 27–29 ] β‐Ga 2 O 3 , [ 30 ] Ga 2 O 3 :CdO, [ 31 ] κ‐Ga 2 O 3 , [ 32 ] ZnGa 2 O 4 , [ 33 ] In 0.5 Ga 0.5 O, [ 34 ] and SnGaO. [ 35 ] However, all those reported TFTs have employed metal or indium tin oxide electrodes that are opaque in the UV range, so to our best knowledge, no fully DUV‐transparent TFT comprising electrodes based on DUV‐TCOs has been reported to date.…”

Section: Introductionmentioning

confidence: 99%

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Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO₃

Seo,

Kim,

Kim

et al. 2023

Adv Elect Materials

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Ultra‐wide bandgap semiconductors are gaining attention for their promising properties for UV optoelectronics and UV transparent electronics as well as high‐power applications. Among them, La‐doped SrSnO3 exhibits excellent properties both for deep‐UV transparent oxide semiconductors and deep‐UV transparent conducting oxide. Here, the demonstration of thin film transistors (TFTs) with full deep‐UV transparency is reported, including electrodes, gate oxide, and substrate. The lightly La‐doped SrSnO3 for the channel layer is grown on MgO (100) substrates with buffer layers by pulsed laser deposition. TFTs with a metal—insulator–semiconductor structure are fabricated using high‐k perovskite dielectric LaScO3 as the gate oxide. A degenerately La‐doped SrSnO3 is used as the gate, the source, and the drain electrodes to obtain good ohmic contact with the channel layer as well as UV transparency. The resultant device shows a field effect mobility value of ≈24 cm2 V−1 s−1 and an on/off ratio >106. The optical transmittance of the entire device (including the substrate) is found to be >75% at 300 nm in wavelength. Furthermore, the electrical characteristics of the device exhibit excellent stability under visible irradiation. This research highlights the potential of SrSnO3 in advancing the field of UV optoelectronics and UV transparent electronics.

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Section: Transistor Properties Of Sso Tftsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO₃

Seo,

Kim,

Kim

et al. 2023

Adv Elect Materials

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Fully UV Modulated Artificial Synapses with Integrated Sensing, Storage and Computation

Sun,

Zhang,

Jin

et al. 2024

Adv Funct Materials

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Optical synaptic devices are considered a preferred substitute to electrical synapses for low‐energy, high‐efficiency neuromorphic computing (NC). However, most optical synapses irreversible optical response severely restricts their application scenarios. In this study, a fully photon‐modulated synaptic device constructed from Si‐doped beta‐gallium oxide (β‐Ga2O3)/ZnO heterojunction is demonstrated. The device exhibits reversible conductance changes and mimics a range of synaptic behaviors, which are modulated by two different wavelengths (255 and 370 nm) of UV light. Owing to the device's plasticity, four types of logic functions including “AND”, “OR”, “NOR” and “NAND” are implemented in the device by optical stimulation. Furthermore, an artificial neural network (ANN) is simulated based on the device's excitatory and inhibitory characteristics, and an optical programming scheme is employed to enhance the network's performance, resulting in a high recognition rate of 95.5% for handwritten digits. The fully photon‐modulated synapse development strategy and programming scheme, as presented in this work, advance the utilization of optical artificial synapses in ANN.

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First‐Principles Study on the Effects of Ta Doping and Point Defects of H_i and V_O on the Photoelectric Properties of β‐Ga₂O₃

Yang,

Wen,

Chen

et al. 2023

Physica Status Solidi (b)

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Herein, the photoelectric properties of Ta‐doped β‐Ga2O3 are studied based on first‐principles density functional theory calculation. The effects of interstitial H and O vacancies on the properties of the system are also considered. The electronic structure, dielectric function, absorption spectrum, mobility, and conductivity of all the systems are studied and analyzed. The results show that Ta‐doped β‐Ga2O3 is an n‐type direct‐bandgap semiconductor. With the increase in Ta doping concentration, the dielectric constant, polarization ability, and charge binding ability of the system gradually increase, the bandgap gradually narrows, and the absorption spectra of systems redshift. The main absorption wavelengths of all systems are in the wavelength range of less than 300 nm. Therefore, Ta‐doped β‐Ga2O3 has an ultraviolet detection ability. The introduction of Ta is beneficial to improve the conductivity of the system. Interstitial H can improve the conductivity of the system.

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Improved β-Ga2O3 Solar-Blind Deep-Ultraviolet Thin-Film Transistor Based on Si-Doping

Cited by 11 publications

References 45 publications

Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO₃

Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO₃

Fully UV Modulated Artificial Synapses with Integrated Sensing, Storage and Computation

First‐Principles Study on the Effects of Ta Doping and Point Defects of H_i and V_O on the Photoelectric Properties of β‐Ga₂O₃

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Improved β-Ga2O3 Solar-Blind Deep-Ultraviolet Thin-Film Transistor Based on Si-Doping

Cited by 11 publications

References 45 publications

Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO3

Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO3

Fully UV Modulated Artificial Synapses with Integrated Sensing, Storage and Computation

First‐Principles Study on the Effects of Ta Doping and Point Defects of Hi and VO on the Photoelectric Properties of β‐Ga2O3

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Product

Resources

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Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO₃

Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO₃

First‐Principles Study on the Effects of Ta Doping and Point Defects of H_i and V_O on the Photoelectric Properties of β‐Ga₂O₃