2009 IEEE International Conference on Indium Phosphide &Amp; Related Materials 2009
DOI: 10.1109/iciprm.2009.5012484
|View full text |Cite
|
Sign up to set email alerts
|

Improvement in electrostatic-discharge tolerance of 1.3µm AlGaInAs/InP buried heterostructure laser diodes

Abstract: This is the first report on electrostatic discharge (ESD)-induced degradation of AlGaInAs/InP buried heterostructure laser diodes. We found that the dominant degradation mechanism was melting of the active layer due to light absorption. We successfully improved ESD tolerance by facet passivation. The cumulative degradation ratio at 1.0kV ESD tests was decreased from 40 to 0%.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 14 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?