Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C

Abstract

This study examined the effect of oxygen (O2) high pressure annealing (HPA) on tin-doped indium oxide (ITO) thin film transistors (TFTs). The HPA-treated TFT at 150 °C exhibited a high saturation mobility (μSAT), low subthreshold gate swing (SS), threshold voltage, and Ion/off of 25.8 cm2/Vs, 0.14 V/decade, 0.6 V, and 2 × 108, respectively. In contrast, the ambient-annealed device suffered from a lower μSAT and high SS value of 5.2 cm2/Vs and 0.58 V/decade, respectively. This improvement can be attributed to the decreased concentration of oxygen vacancy defects in the ITO channel layer during the effective O2 HPA treatment, which also resulted in smaller hysteresis and less degradation of the drain current under positive bias stress conditions.

Photo-induced Reactive Oxygen Species Activation for Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite

“…From these results, we figure out that NaClO activation has an effect on the entire a-IGZO channel layer. It shows that ROS generated from NaClO (50%) can form the M–O bonds for the activation of the a-IGZO channel layer and improve PBS instability of a-IGZO TFTs by decreasing oxygen vacancies, which act as electron trap sites in deep-level states, simultaneously. − …”

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

“…With a rapid development of oxide semiconductors since Hosono's frontier works, 1,2 the current trend of TFT application is to employ amorphous oxide semiconductors (AOSs) instead of widely used hydrogenated amorphous silicon (a-Si:H) as the active channel layer for next generation FPDs with high resolution (at least 2k  4k), fast frame rate (>120 Hz), and large panel size, which require the TFTs have carrier mobility larger than 3 cm 2 /Vs. 3,4 So far, many indium oxide (InOx-) based AOSs such as In-O, 5 In-Ga-O, 6 In-Si-O, 7,8 In-Sn-O, 9 In-W-O, 7,10,11 In-Zn-O, 12 and multi-component In-Ga-Zn-O, 2, [13][14][15] In-Hf-Zn-O, 16 In-Sc-Zn-O, 17 In-Si-Zn-O, 18 In-Sn-Zn-O, 19 In-W-Zn-O, 20 In-Zr-Zn-O, 21 etc., have been studied as the channel layers of TFTs because of their high electron mobilities. 4,22 Amongst, the amorphous In-Ga-Zn-O (a-IGZO) has been received particular attention and been used to demonstrate large-size high-definition prototype FPDs.…”

Heterogeneous Integration of Atomically‐Thin Indium Tungsten Oxide Transistors for Low‐Power 3D Monolithic Complementary Inverter

“…[ 20 ] Alternatively, ultra nano‐sheet (UNS) architecture with a few atomic layers was utilized to enhance the gate control ability to operate in the fully depleting mode, achieving better subthreshold swing (SS), and inhibiting short channel effect. [ 6,21,22 ] However, there was a trade‐off between the channel layer thickness and mobility, [ 22–42 ] as shown in Figure 1b. The strong scattering effect would occur causing significant degradation of mobility.…”

“…b) The comparison between channel thickness and field effect mobility in the different material, such as amorphous oxide semiconductor (AOS), 2D material, and single crystalline silicon. [ 22–42 ] c) The transmission electron microscope (TEM) image of cross‐section in atomically‐thin amorphous indium tungsten oxide (a‐IWO) TFTs. d) The inverter equivalent circuit is composed of poly‐Si TFTs and a‐IWO TFTs as the p‐channel TFT (P‐TFT) and n‐channel TFT (N‐TFT), respectively.…”