Improvement of amorphous-carbon active-layer thin-film light-emitting diodes using room-temperature ultrasound treatment

Abstract

Ultrasound treatment ͑UST͒ applied at room temperature enhances electroluminescent intensity ͑maximum at 600 nm͒ and optical output in thin-film light-emitting diodes with hydrogenated amorphous-carbon as an active layer. This positive UST effect is attributed to a reduction of the diode series resistance caused by a change of the interface and contact resistances. The UST effect is saturated with increase of the ultrasound amplitude.