Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment

Chen, Kai-Huang; Chang, Kuan‐Chang; Chang, Ting‐Chang; Tsai, Tsung‐Ming; Liang, Shu-Ping; Young, Tai‐Fa; Syu, Yong-En; Sze, Simon M.

doi:10.1186/s11671-016-1272-5

Cited by 13 publications

(5 citation statements)

References 24 publications

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“…This figure also shows the schematic images of the resistance transition processes of the silicon oxide film of device B. [31][32][33][34] Closed circles present the expected Si precipitates. Dotted lines reveal the electron tunneling path.…”

Section: Conductive Filament Structure Depending On Polarity Of Elect...mentioning

confidence: 94%

Roles of chemical stoichiometry and hot electrons in realizing the stable resistive transition of sputter-deposited silicon oxide films

Yamaguchi

Sato

Ōmura

2017

Jpn. J. Appl. Phys.

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In this study, the important roles of chemical stoichiometry and hot electrons in realizing the stable bipolar resistive transition of sputter-deposited silicon oxide films were demonstrated. It was also clearly demonstrated that the injection of “hot” electrons from the silicon substrate induces stable resistive transitions for a low concentration of suboxide and metallic Si atoms, and that the injection of “cold” electrons from the silicon substrate does not induce stable resistive transitions in spite of the inclusion of metallic Si atoms in the oxide films. However, it was shown that the specific metal top electrode that does not react with oxygen ions is useful as the electron injector and temporal oxygen-ion pocket for the stable resistive transition of sputter-deposited silicon oxide films.

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Section: Conductive Filament Structure Depending On Polarity Of Elect...mentioning

confidence: 94%

Roles of chemical stoichiometry and hot electrons in realizing the stable resistive transition of sputter-deposited silicon oxide films

Yamaguchi

Sato

Ōmura

2017

Jpn. J. Appl. Phys.

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“…The SS of the device are reduced from 0.44 V/dec to 0.24 V/dec. The Ion/Ioff ratio of the device increases from 5.43×10 6 to 1.23×10 8 . Meanwhile, the output characteristic of device is improved after the SCCO2 oxidation treatment shown in Figure 2b.…”

Section: (A) Electrical Characteristics Of Devicementioning

confidence: 98%

P‐1.13: Supercritical Fluid Oxidation Methodology on a‐IZAO Thin‐Film Transistors

Liu

Zhang

et al. 2021

Symp Digest of Tech Papers

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A novel oxidation treatment of low‐temperature supercritical fluids is proposed in the research, which is able to improve the comprehensive performance of the a‐IGZO thin‐film transistors (TFTs) under low temperature. After the treatment, the subthreshold swing (SS) of the device is reduced from 0.44 V/dec to 0.24 V/dec. Meanwhile, the mobility and Ion/Ioff current ratio of the device are increased from 4.70 cm2/Vs to 8.53 cm2/Vs and 5.43x106 to 1.23x108, respectively. Through the material analysis including Fourier transform infrared spectroscopy (FTIR) and X‐ray photoelectron shows that the supercritical treatment improves the oxidation level of a‐IGZO layer and dielectric layer, and passivates the defects in the dielectric layer.

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“…Pt-Al and Cu-Ti) [16][17][18], graphene [19,20], NiSi [21], and oxides like indium-tin-oxide, SrRuO 3 , etc. [22][23][24][25]. The electrode materials can be put into two categories considering their performance in RS.…”

Section: Selection Of Electrode Materialsmentioning

confidence: 99%

Development of ferroelectric oxides based resistive switching materials

Guan

Sun

Wan

et al. 2017

Materials Science and Technology

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Resistive random access memory (RRAM) is one of the most promising candidates that satisfies the requirements of new generation non-volatile memories, as a consequence of its high density, outstanding scalability, and low power consumption. The review is based on a summary of recent studies in ferroelectric oxides based resistive switching (RS) materials and devices. It highlights the various ferroelectric oxide materials with RS behaviour and the underlying mechanisms including filament-type and interface-type mechanism. In the end, the challenge in current RRAM for future high-density data storage applications is addressed.

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Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment

Cited by 13 publications

References 24 publications

Roles of chemical stoichiometry and hot electrons in realizing the stable resistive transition of sputter-deposited silicon oxide films

Roles of chemical stoichiometry and hot electrons in realizing the stable resistive transition of sputter-deposited silicon oxide films

P‐1.13: Supercritical Fluid Oxidation Methodology on a‐IZAO Thin‐Film Transistors

Development of ferroelectric oxides based resistive switching materials

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