Improvement of Breakdown Voltage and ON-Resistance in Normally-OFF AlGaN/GaN HEMTs Using Etching-Free p-GaN Stripe Array Gate

Wei, Xing; Zhang, Xiaodong; Sun, Chi; Tang, Wenxin; Fu, Chen; He, Tao; Yu, Guo; Song, Liang; Lin, Wenfang; Zhang, Xuan; Zhao, Dezheng; Huang, Wei; Cai, Yong; Zhang, Baoshun

doi:10.1109/ted.2021.3105088

Cited by 19 publications

(5 citation statements)

References 25 publications

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“…Consequently, the HBB-HEMTs hold considerable promise for power electronics applications because of their high BV and low R on, sp . [33][34][35][36][37][38][39]. The proposed HBB-HEMT devices exhibit a favora ance between BV and Ron, sp relative to these previously reported results.…”

Section: Breakdown Propertiessupporting

confidence: 49%

“…Figure 9. BV and the R on, sp for this work compared with other reported results[33][34][35][36][37][38][39].…”

mentioning

confidence: 51%

“…Due to the effective electric field modulation capability of the hybrid AlGaN back barrier, the proposed HBB-HEMT devices demonstrate significant advantages in achieving a high BV and low R on, sp . The performance of other reported GaN HEMT devices is included for comparison in Figure 9 [33][34][35][36][37][38][39]. The proposed HBB-HEMT devices exhibit a favorable balance between BV and R on, sp relative to these previously reported results.…”

Section: Breakdown Propertiesmentioning

confidence: 78%

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Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks

Tian,

Hu,

et al. 2024

Electronics

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To improve the breakdown voltage (BV), a GaN-based high-electron-mobility transistor with a hybrid AlGaN back barrier (HBB-HEMT) was proposed. The hybrid AlGaN back barrier was constructed using the Al0.25Ga0.75N region and Al0.1G0.9N region, each with a distinct Al composition. Simulation results of the HBB-HEMT demonstrated a breakdown voltage (1640 V) that was 212% higher than that of the conventional HEMT (Conv-HEMT) and a low on-resistance (0.4 mΩ·cm2). Ultimately, the device achieved a high Baliga’s figure of merit (7.3 GW/cm2) among reported devices of similar size. A back-propagation (BP) neural network-based prediction model was trained to predict BV for enhanced efficiency in subsequent work. The model was trained and calibrated, achieving a correlation coefficient (R) of 0.99 and a prediction accuracy of 95% on the test set. The results indicated that the BP neural network model using the Levenberg–Marquardt algorithm accurately predicted the forward breakdown voltage of the HBB-HEMT, underscoring the feasibility and significance of neural network models in designing GaN power devices.

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Section: Breakdown Propertiessupporting

confidence: 49%

“…Figure 9. BV and the R on, sp for this work compared with other reported results[33][34][35][36][37][38][39].…”

mentioning

confidence: 51%

Section: Breakdown Propertiesmentioning

confidence: 78%

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Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks

Tian,

Hu,

et al. 2024

Electronics

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“…Especially, the enhancement-mode (E-mode) HEMTs with the normally-OFF operation are more favorable for safe operation in power electronic systems [6][7][8][9][10]. A widely adopted method to construct E-mode HEMTs is to employ a p-type GaN cap layer on top of the HEMT structure [11][12][13]. As a result, the intrinsic two-dimensional carrier gas (2DEG) channel can be depleted, leading to a positive threshold voltage (V TH ) in such p-GaN-gated HEMTs (P-HEMTs).…”

Section: Introductionmentioning

confidence: 99%

Enhanced performance of normally-OFF GaN HEMTs with stair-shaped p-GaN cap layer

Ye,

Zhang,

Xing

et al. 2024

J. Phys. D: Appl. Phys.

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The p-GaN gated E-mode HEMTs (P-HEMTs) are being extensively studied for emerging power electronics. However, the devices still suffer from performance trade-off among threshold voltage (VTH), output drain current (IDS), and breakdown voltage (VBD). Herein, we propose P-HEMTs with a stair-like p-GaN cap layer to boost their performance. The p-GaN cap layer is composed of four discrete p-GaN staircases with the decreased thickness to the right (Right-Stair P-HEMT, RSP-HEMT) or to the left (Left-Stair P-HEMT, LSP-HEMT). It is found that the RSP-HEMT simultaneously achieves the 1.3-times increased IDS, 160 V enhanced VBD, and improved VTH stability against drain-induced barrier lowering (DIBL) effects, compared with the LSP-HEMT and the conventional BaSeline P-HEMT (BSP-HEMT). These device merits should be attributed to the effective manipulation of the lateral electric field (EF) under all bias conditions by the unique band structures enabled by the RSP configuration. Such EF manipulation strategies to improve device characteristics offer us helpful guidance and insights to further propel the development of high-performance E-mode P-HEMTs of the future.

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“…This approach has been shown to be effective in avoiding the introduction of defects in the active region of the device that could degrade its performance, unlike ICP dry etching. This technique has now been applied to the fabrication of high-performance enhanced p-GaN gate HEMTs [11,12] and diodes [13−15] .…”

Section: Introductionmentioning

confidence: 99%

Study of enhancement-mode GaN pFET with H plasma treated gate recess

Gao,

Yu,

Zhou

et al. 2023

J. Semicond.

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This letter showcases the successful fabrication of an enhancement-mode (E-mode) buried p-channel GaN field-effect-transistor on a standard p-GaN/AlGaN/GaN-on-Si power HEMT substrate. The transistor exhibits a threshold voltage (V TH) of −3.8 V, a maximum ON-state current (I ON) of 1.12 mA/mm, and an impressive I ON/I OFF ratio of 107. To achieve these remarkable results, an H plasma treatment was strategically applied to the gated p-GaN region, where a relatively thick GaN layer (i.e., 70 nm) was kept intact without aggressive gate recess. Through this treatment, the top portion of the GaN layer was converted to be hole-free, leaving only the bottom portion p-type and spatially separated from the etched GaN surface and gate-oxide/GaN interface. This approach allows for E-mode operation while retaining high-quality p-channel characteristics.

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Improvement of Breakdown Voltage and ON-Resistance in Normally-OFF AlGaN/GaN HEMTs Using Etching-Free p-GaN Stripe Array Gate

Cited by 19 publications

References 25 publications

Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks

Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks

Enhanced performance of normally-OFF GaN HEMTs with stair-shaped p-GaN cap layer

Study of enhancement-mode GaN pFET with H plasma treated gate recess

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