Improvement of crystalline quality of GaPN layers grown by RF‐plasma MBE with ion collector

Abstract

The effects on structural crystalline quality and luminescence properties of deflecting nitrogen (N) ions away from the substrate were investigated for GaPN layers grown on GaP substrates by RF‐plasma MBE. The GaPN layers were grown with and without use of an ion collector for N ions deflection. The Pendellösung fringes in the X‐ray diffraction spectrum were more distinct in samples grown with than without the ion collector. This result indicates that the structural and/or interface quality were improved by preventing ion‐induced damage. The sample grown with the ion collector indicated higher crystalline quality by the more linear excitation power dependence of photoluminescence intensity. On the other hand, the sample grown without the ion collector appears to contain a high concentration of non‐radiative recombination centers related to the ion‐induced damage. The ion‐induced damage cannot be completely healed by rapid thermal annealing. To summarize, eliminating ion exposure during growth improves the crystalline quality and radiative recombination properties of the GaPN layer. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

III–V epitaxy on Si for photonics applications

“…The decrease of the PL intensity above 77 K indicates the activation of nonradiative point defects. The PL intensity was increased by rapid thermal annealing (RTA) [15] and by deflecting N ions generated in an rf plasma cell of a N radical source in MBE [16]. Similar increase in the PL intensity by RTA was observed in the GaPN layer grown by MOVPE.…”

“…Temperature dependence of photoluminescence intensity of GaPN layers grown by MBE and MOVPE[14][15][16].…”

Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE

“…An ion deflector was used to avoid N-ion damage for the rf-plasma N cell [36]. Prior to growth, thermal cleaning was performed at 610 1C under the condition of As 2 beam irradiation on a semi-insulating epi-ready GaAs (0 0 1) substrate.…”

MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substrates

“…Our growth chamber was equipped with a dual-filament cell filling Ga (7 N) for the Ga beam, a thermal decomposition cell filling polycrystalline InP (6 N) for the P 2 beam and a valved cracker cell filling metallic As (7 N) for the As 2 beam. An rf-plasma cell flowing pure N 2 gasses (6 N) was used and was equipped with an ion deflector to remove N-related ions [21]. The growth rate was set to be 0.3 mm/h.…”