Improvement of Current Injection of Porous Silicon

Abstract

n-i-p-n hydrogenated amorphous silicon (a-Si:H) layers were deposited onto porous silicon (PS) formed on p-type crystalline silicon (c-Si) by anodization and used to improve the current injection of a PS-based light-emitting diode (LED). The electroluminescence (EL) spectrum for the obtained PS-based LED with n-i-p-n a-Si:H layers showed the similar tendency as that of a photoluminescence (PL) signal for an as-anodized PS. The current conduction mechanisms of this PS-based LED were also studied.

Effects of Indium Depositions on Porous Silicon Nanostructure (PSN)

“…Porous silicon nanostructure (PSN) was studied intensively since luminescent was reported 1 hoping that more Si based optoelectronic devices can be developed in future. It is well known that c-Si does not emit light due to its indirect band gap 2 and is very different from PSN which is postulated to have a direct band-gap according to quantum confinement model. The luminescence mechanism is however not well known and is under extensive to explain the mechanism.…”