Improvement of data retention in HfO&lt;inf&gt;2&lt;/inf&gt;/Hf 1T1R RRAM cell under low operating current

Chen, Yang Yin; Komura, Masanori; Degraeve, R.; Govoreanu, B.; Goux, L.; Fantini, A.; Raghavan, N.; Clima, Sergiu; Zhang, Leqi; Belmonte, Attilio; Redolfi, A.; Kar, Gouri Sankar; Groeseneken, G.; Wouters, Dirk J.; Jurczak, M.

doi:10.1109/iedm.2013.6724598

Cited by 69 publications

(57 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…While excellent intrinsic retention properties have been demonstrated for median bits under DC programming condition, a different pictures arises when array-relevant conditions are considered. In particular, it has been shown [6]- [9] that in low-current and fast-pulse programming regime, a small population of fasterasing bits typically appears. These fast-erasing bits (retention tails) cannot be predicted from their initial resistance value and due to their low activation energy (E a ) determine the overall array failure.…”

Section: Introductionmentioning

confidence: 99%

Novel Flexible and Cost-Effective Retention Assessment Method for TMO-Based RRAM

Chen

Fantini

Goux

et al. 2016

IEEE Electron Device Lett.

View full text Add to dashboard Cite

In this letter, we propose a novel single-cell, cycle-to-cycle based retention testing method, enabling fast statistical retention assessment on oxide-based resistive random access memory (RRAM). Detailed comparison between cycle-tocycle and device-to-device retention testing methods is made on TiN\HfO 2 \Hf stack showing excellent agreement in terms of failure rate and extracted activation energy. Due to the unique properties of filamentary RRAM, this new retention testing method allows fast and cost effective retention benchmarking of different material stacks and is particularly versed in the study of the impact of programming algorithms.

show abstract

Section: Introductionmentioning

confidence: 99%

Novel Flexible and Cost-Effective Retention Assessment Method for TMO-Based RRAM

Chen

Fantini

Goux

et al. 2016

IEEE Electron Device Lett.

View full text Add to dashboard Cite

show abstract

“…Among the typical applications of memristive devices, one should mention such successful implementations as a memory device on the basis of vertical integration of RRAM cells with the CMOS circuits in a 1T-1R architecture [13,14] or logic gates with high endurance realized using the complementary pairs of RRAM cells [15]. And artificial neural networks -elementary single-layer perceptrons -have already been demonstrated on the basis of solid-state memristive nanocrossbar arrays [16] or organic memristive devices [17].…”

Section: Introductionmentioning

confidence: 99%

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Mikhaylov

Gryaznov

Belov

et al. 2016

Phys. Status Solidi C

View full text Add to dashboard Cite

The breakthrough in electronics and information technology is anticipated by the development of emerging memory and logic devices, artificial neural networks and brain-inspired systems on the basis of memristive nano-materials represented, in a particular case, by a simple 'metal-insulator-metal' (MIM) thin-film structure. The present article is focused on the comparative analysis of MIM devices based on oxides with dominating ionic (ZrOx, HfOx) and covalent (SiOx, GeOx) bonding of various composition and geometry deposited by magnetron sputtering. The studied memristive devices demonstrate reproducible change in their resistance (resistive switching - RS) originated from the formation and rupture of conductive pathways (filaments) in oxide films due to the electric-field-driven migration of oxygen vacancies and/or mobile oxygen ions. It is shown that, for both ionic and covalent oxides under study, the RS behaviour depends only weakly on the oxide film composition and thickness, device geometry (down to a device size of about 20x20 mu m(2)). The devices under study are found to be tolerant to ion irradiation that reproduces the effect of extreme fluences of high-energy protons and fast neutrons. This common behaviour of RS is explained by the localized nature of the redox processes in a nanoscale switching oxide volume. Adaptive (synaptic) change of resistive states of memristive devices is demonstrated under the action of single or repeated electrical pulses, as well as in a simple model of coupled (synchronized) neuron-like generators. It is concluded that the noise-induced phenomena cannot be neglected in the consideration of a memristive device as a nonlinear system. The dynamic response of a memristive device to periodic signals of complex waveform can be predicted and tailored from the viewpoint of stochastic resonance concept. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

show abstract

“…While some reports claim that the resistance increase is due to lateral diffusion and redox processes of O-species between the CF and the surrounding oxide material, 4,5,8 other works point to vertical processes between the CF and the scavenging metal. 6,10 The purpose of this letter is to show experimental evidence aiming to clarify the dominant contribution (vertical or lateral) to the retention properties of Ta 2 O 5 -based cells.…”

mentioning

confidence: 99%

Evidences of Electrode-Controlled Retention Properties in Ta2O5-Based Resistive-Switching Memory Cells

Goux

Fantini

Chen

et al. 2014

ECS Solid State Letters

View full text Add to dashboard Cite

In this letter we optimize Ta 2 O 5 -based resistive-switching memory cells for improved retention properties. We show that the electrode material used as oxygen-scavenging element directly controls the state stability. As compared to TiN\Ta 2 O 5 \Ti cells the conductive filament retention is improved for TiN\Ta 2 O 5 \Ta cells due to the lower oxygen affinity of Ta. The oxygen chemical potential profile along the filament is also modulated by the Ta thickness, allowing reaching excellent retention of both low-and high-resistance states for several weeks at 250 • C. © The Author(s) 2014. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0011412ssl] All rights reserved. The resistive-switching memory (RRAM) technology has recently gained a lot of interest due to promising scalability, low-voltage and fast programming, as well as impressive progress in terms of reliability.1-6 Typical cells consist of an oxide layer sandwiched between metal electrodes. After a so-called forming process generally required to create a conductive filament (CF) through the oxide, the cell may be reversibly reset-switched to a high-resistance state (HRS) and set-switched to a low-resistance state (LRS).It is generally accepted that the CF consists of a chain of oxygen-vacancy defects (V o ) bridging both electrodes. For an optimum bipolar-switching operation, asymmetric cells are typically used whereby one of the electrodes shows high oxygen affinity in order to increase the oxygen-vacancy profile from the low-affinity electrode toward the so-called oxygen-scavenging electrode.6,7 Based on this guideline, excellent switching control has been reported in HfO 2 -based cells using either Ti 2 or Hf 1,7 scavenging metals. Recently, promising switching and reliability properties have also been demonstrated in Ta 2 O 5 -based cells. [3][4][5] Reliability studies are however still scarce in the literature, which limits the visibility on the future of this technology. In particular, although some models have been proposed to describe retention failure mechanisms, 8,9 there is still no clear understanding of the microscopic origin of retention loss. It is indeed generally accepted that the increase of the state resistance is related to a decrease of number of V o defects in the CF, however the dominant mechanism leading to this decrease is still debated. While some reports claim that the resistance increase is due to lateral diffusion and redox processes of O-species between the CF and the surrounding oxide material, 4,5,8 other works point to vertical processes between the CF and the scavenging metal.6,10 The purpose of this letter is...

show abstract

Improvement of data retention in HfO<inf>2</inf>/Hf 1T1R RRAM cell under low operating current

Cited by 69 publications

References 4 publications

Novel Flexible and Cost-Effective Retention Assessment Method for TMO-Based RRAM

Novel Flexible and Cost-Effective Retention Assessment Method for TMO-Based RRAM

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Evidences of Electrode-Controlled Retention Properties in Ta2O5-Based Resistive-Switching Memory Cells

Contact Info

Product

Resources

About