Improvement of emission efficiency of nanocrystalline silicon planar cathodes

Shimawaki, H.; Neo, Y.; Mimura, Hidenori; Murakami, Katsuhisa; Wakaya, Fujio; Takai, M.

doi:10.1116/1.2839886

Cited by 17 publications

(11 citation statements)

References 13 publications

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“…Planar-type electron sources based on a metal-oxide-semiconductor structure (MOS) can be operated at low vacuum, low voltage, and room temperature conditions [14][15][16][17], and 3 emit electron beams with small divergence angles [18]. Although these features are advantageous for the several applications, such as low-cost, high-resolution electron microscopes, highly sensitive image sensors [19], field emission displays [20], and electron beam lithography [21,22], they have a very low electron emission efficiency of 0.002 % [16].…”

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confidence: 99%

High-performance planar-type electron source based on a graphene-oxide-semiconductor structure

Murakami

Miyaji

Furuya

et al. 2019

Applied Physics Letters

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A graphene-oxide-semiconductor (GOS) planar-type electron source was fabricated by direct synthesis of graphene on an oxide layer via low-pressure chemical vapor deposition. It achieved a maximum electron emission efficiency of 32.1% by suppressing the electron inelastic scattering within the topmost gate electrode using graphene electrode. In addition, a 100-mA/cm 2 electron emission current density was observed at 16.2-% electron emission efficiency. The electron energy spread was well fitted to Maxwell-Boltzmann distribution, which indicates that the emitted electrons are thermally equilibrium state within the electron source. The full-width at half-maximum energy spread of the emitted electrons was approximately 1.1 eV. The electron emission efficiency did not deteriorate after more

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confidence: 99%

High-performance planar-type electron source based on a graphene-oxide-semiconductor structure

Murakami

Miyaji

Furuya

et al. 2019

Applied Physics Letters

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“…The electron emission efficiency is predicted to reach 3%-10% if electron scattering on the inside of the topmost metal electrode is perfectly suppressed. 8,[10][11][12] For conventional metal electrodes, however, making a high-conductive continuous electrode with a thickness of below 1-2 nm is difficult. Graphene is a single atomic-layered carbon sheet with high electrical conductivity.…”

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Graphene-oxide-semiconductor planar-type electron emission device

Murakami

Tanaka

Miyashita

et al. 2016

Applied Physics Letters

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Graphene was used as the topmost electrode for a metal-oxide-semiconductor planar-type electron emission device. With several various layers, graphene as a gate electrode on the thin oxide layer was directly deposited by gallium vapor-assisted chemical vapor deposition. The maximum efficiency of the electron emission, defined as the ratio of anode current to cathode current, showed no dependency on electrode thickness in the range from 1.8 nm to 7.0 nm, indicating that electron scattering on the inside of the graphene electrode is practically suppressed. In addition, a high emission current density of 1–100 mA/cm2 was obtained while maintaining a relatively high electron emission efficiency of 0.1%–1.0%. The graphene-oxide-semiconductor planar-type electron emission device has great potential to achieve both high electron emission efficiency and high electron emission current density in practical applications.

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“…5 However, only a few studies have been conducted on the planar-type cold cathodes based on the dry-processed Si-nanodot layer. 6,7 It has been reported by Nakagawa et al 8 that a single layer of self-assembled Si-nanodots with a rather uniform dot size distribution and a high areal dot density can be fabricated on SiO 2 / c-Si substrate by controlling the early stage of low-pressure chemical vapor deposition ͑LPCVD͒ from SiH 4 . They have also demonstrated that the height and diameter of Si-nanodot are controlled by the cohesive energy of Si and the SiH 4 decomposition energy at Si nucleation sites, respectively.…”

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Development of dry-processed silicon nanodot planar cold cathode and its electron emission properties

Hirano¹,

Nanba²,

Egami³

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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A dry-processed planar-type cold cathode has been developed using a nanometer-sized Si dot film as an electron drift layer. Multilayered Si-nanodot films were fabricated on a n-type single-crystalline Si (c-Si) wafer by sequential dry processing (low-pressure chemical vapor deposition) and subsequent thermal oxidation. Planar-type cold cathodes composed of a thin Au film, a nanometer-sized Si dot film, a c-Si substrate, and a back contact exhibit fluctuation-free electron emission with small angle dispersion. The emission efficiency was 0.14% at an applied voltage of 20V for the device with the average Si dot size of 1.3nm. The emission model based on multiple tunneling cascade in nanocrystalline silicon dot chain interconnected via tunnel oxide has been supported by the device fabricated using dry processing.

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Improvement of emission efficiency of nanocrystalline silicon planar cathodes

Cited by 17 publications

References 13 publications

High-performance planar-type electron source based on a graphene-oxide-semiconductor structure

High-performance planar-type electron source based on a graphene-oxide-semiconductor structure

Graphene-oxide-semiconductor planar-type electron emission device

Development of dry-processed silicon nanodot planar cold cathode and its electron emission properties

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