2021
DOI: 10.1016/j.electacta.2021.138658
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Improvement of fill factor by the utilization of Zn-doped PEDOT:PSS hole-transport layers for p-i-n planar type of perovskite solar cells

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Cited by 15 publications
(7 citation statements)
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“…One common strategy used to minimize the critical issues mentioned above is to add p-type dopants to the HTL. , The p-type dopants deepen the Fermi level ( E F ) of the HTL and, therefore, can create favorable interfacial energetic alignment, which reduces the energy loss at the interface between the perovskite and HTL. Importantly, p-type dopants increase the conductivity of the HTL, which can improve the fill factor (FF) of the devices via more-efficient charge extraction. Despite the success of utilizing dopants in the HTL, some undesirable effects are also introduced with doping. One issue is the device instability caused by dopant dissociation and the hygroscopic nature of some dopants such as lithium­(bis­(trifluoromethanesulfonyl)­imide (LiTFSI). , Another significant effect of doping the HTL is strong recombination loss at the interface.…”
mentioning
confidence: 99%
“…One common strategy used to minimize the critical issues mentioned above is to add p-type dopants to the HTL. , The p-type dopants deepen the Fermi level ( E F ) of the HTL and, therefore, can create favorable interfacial energetic alignment, which reduces the energy loss at the interface between the perovskite and HTL. Importantly, p-type dopants increase the conductivity of the HTL, which can improve the fill factor (FF) of the devices via more-efficient charge extraction. Despite the success of utilizing dopants in the HTL, some undesirable effects are also introduced with doping. One issue is the device instability caused by dopant dissociation and the hygroscopic nature of some dopants such as lithium­(bis­(trifluoromethanesulfonyl)­imide (LiTFSI). , Another significant effect of doping the HTL is strong recombination loss at the interface.…”
mentioning
confidence: 99%
“…Table 1 lists the PCE and long-term stability of PSCs adopting PEDOT:PSS as HTL in previous research work. Generally, modification methods can be classified into three types: doping [61,[78][79][80][81][82][83][84][85][86][87][88][89][90][91][92][93][94], post-treatment [62,[95][96][97] and using bilayer [98][99][100][101][102]. Furthermore, there are some other methods reported to modify the properties of PEDOT:PSS for improving the device stability, such as, using other dopants to replace PSS [56,103], and developing new processing methods of PEDOT:PSS film [104,105], which are discussed in Section 3.…”
Section: Methods To Improve the Pscs Stability By Tailoring Pedot:pss Htlmentioning
confidence: 99%
“…It has been proved that the conductivity of PEDOT:PSS can be increased from 10 −2 to 10 3 S/cm by doping an organic compound, such as ethylene glycol (EG), dimethyl sulfoxide (DMSO), an ionic liquid, an anionic surfactant, or dimethyl sulfate, into PEDOT:PSS aqueous solution [23][24][25][26][27][28][29]. Besides conductivity, other properties, such as work function, acidity and hydrophilic properties, can also be modified using the doping method [61,[78][79][80][81][82][83][84][85][86][87][88][89][90][91][92][93][94].…”
Section: Dopingmentioning
confidence: 99%
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“…84 Moreover, using Zn-doped PEDOT: PSS as the HTM improved the photovoltaic performance, where the FF increased from 70.00% to 83.00%. 85 Introduction of low-cost and stable conjugated polymer such as poly[(thiophene)- alt -(6,7-difluroro-2-(2-hexyldecyloxy)-quinoxaline)] (PTQ10) as an interfacial layer in planar n–i–p PSC not only improved the active layer quality and suppressed the volatilization of organic cations during the thermal annealing process but also functioned as a hole selective layer. As a result, a champion PCE of 21.20% with a high FF of 81.60% as well as thermal and ambient stability was achieved.…”
Section: Polymeric Materials To Improve Fill Factor (Ff)mentioning
confidence: 99%