Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD)

Ronsisvalle, C.; Enea, V.

doi:10.1016/j.microrel.2010.07.078

Cited by 7 publications

(1 citation statement)

References 7 publications

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“…Introduction: The edge curvature effect seriously affects the breakdown voltage (BV) of the high-voltage vertical MOSFETs. Several researchers have proposed some termination technologies to relieve the electric field crowding near the source, such as field limit ring (FLR) [1], field plate, junction termination extension [2,3], reduced surface field [4] and variation of lateral doping (VLD) [5,6]. The field plate is an effective method to decrease the electric field near the source, but it results in high electric field at the edge of the field plate, and the characteristic of BV of device is limited.…”

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confidence: 99%

Uniform shallow trenches termination design for high‐voltage VDMOS transistor

Bao

et al. 2020

Electron. lett.

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A new uniform shallow trenches termination (ST 2) with field plate for high-voltage VDMOS transistor is proposed in this Letter. In ST 2 structure, the electric field near the source is decreased and the depletion region is extended by the field plate, besides, many electric field peaks are introduced in shallow trenches under the field plate and the average electric field strength is increased, both improve the characteristic of the breakdown voltage (BV). Simulation results show the BV of ST 2 VDMOS is 706 V with a termination length L d = 132 μm, which reaches 97% of that of the parallel-plane junction, and the influence of the edge curvature effect is almost entirely eliminated. The ST 2 structure is compatible with conventional CMOS process with only one additional mask and its fabrication is low-cost.

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confidence: 99%

Uniform shallow trenches termination design for high‐voltage VDMOS transistor

Bao

et al. 2020

Electron. lett.

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Breakdown voltage capability of vertical 4H–SiC power devices

Godignon,

Biscarrat,

Tranchesset

et al. 2024

Materials Science in Semiconductor Processing

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Design and experimental verification of a novel high-reliability variation of lateral doping (VLD) termination

Guo,

Ren,

Zhang

et al. 2024

Semicond. Sci. Technol.

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A novel two-dimensional mesh-like VLD termination (M-VLD) is proposed, which modifies the conventional ring-shaped track VLD termination (R-VLD) mask into an interconnected mesh-like structure. The comparative simulations and experiments show that M-VLD can achieve better blocking capability and reliability than R-VLD. Vertical Double Diffusion MOSFET (VDMOS) with M-VLD achieves a maximum breakdown voltage (BVmax) of 1588 V, which is 62 V higher than that of VDMOS with R-VLD. Furthermore, the devices with M-VLD exhibit lower leakage currents in 150 ℃ reverse-biased I-V test and successfully pass 1000 hours-125 ℃-1200 V high-temperature reverse bias (HTRB) test, while the devices with R-VLD fail to pass both tests.

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Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD)

Cited by 7 publications

References 7 publications

Uniform shallow trenches termination design for high‐voltage VDMOS transistor

Uniform shallow trenches termination design for high‐voltage VDMOS transistor

Breakdown voltage capability of vertical 4H–SiC power devices

Design and experimental verification of a novel high-reliability variation of lateral doping (VLD) termination

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