2021
DOI: 10.1016/j.rinp.2021.105057
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Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment

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Cited by 9 publications
(4 citation statements)
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“…Further examples include sub-micron LEDs emitting red light made using a thick InGaN segment, in addition to the successful N-polar green LEDs. The intensity of emission is enhanced via in-situ annealing, such that these devices exhibit higher efficiency than their counterparts from the top-down method [176,177]. The addition of an InGaN/GaN Short-Period Superlattice (SPSL) also further red shifts the emission, contributing to improved EQE and wavelength peak values.…”
Section: Efficiency Enhancement Through Nanomaterials and Iiinitride ...mentioning
confidence: 99%
“…Further examples include sub-micron LEDs emitting red light made using a thick InGaN segment, in addition to the successful N-polar green LEDs. The intensity of emission is enhanced via in-situ annealing, such that these devices exhibit higher efficiency than their counterparts from the top-down method [176,177]. The addition of an InGaN/GaN Short-Period Superlattice (SPSL) also further red shifts the emission, contributing to improved EQE and wavelength peak values.…”
Section: Efficiency Enhancement Through Nanomaterials and Iiinitride ...mentioning
confidence: 99%
“…GaN has been proven to be highly resistant to etching and chemical degradation, making it a suitable candidate for PEC water splitting. It has a bandgap comparable to that of a transition metal oxide; however, indium (In) incorporation might be used to tune the bandgap toward visible light absorption. However, because of a lattice mismatch between InN and GaN, thick and good-crystal quality InGaN with a high In content is difficult to grow . InGaN/GaN multiquantum wells (MQWs) were introduced to improve the crystal quality while increasing the indium content in the absorption layer. Conventional MQWs generally employ InGaN and a GaN layer for the well and barrier regions. This structure enables strain relaxation during InGaN/GaN MQW formation.…”
Section: Introductionmentioning
confidence: 99%
“…It is generally believed that high-temperature treatment of InGaN may lead to the formation of In clusters [22,23]. By removing the In clusters through hydrogen treatment [24] or thermal annealing [25,26] after the growth of QWs, the luminescence performance of MQWs can be improved. Recently, Hou et al [26] reported that the interface morphology of InGaN/GaN MQWs can be improved by thermal annealing treatment on InGaN QWs.…”
Section: Introductionmentioning
confidence: 99%
“…By removing the In clusters through hydrogen treatment [24] or thermal annealing [25,26] after the growth of QWs, the luminescence performance of MQWs can be improved. Recently, Hou et al [26] reported that the interface morphology of InGaN/GaN MQWs can be improved by thermal annealing treatment on InGaN QWs. However, the heat-treatment methods mentioned above are mostly applied in the growth process of MQWs and there are few reports on the effects of heat treatment in situ on the as-grown MQWs, where the luminescence properties would also be different.…”
Section: Introductionmentioning
confidence: 99%