Improvement of interface structure and magnetic properties of Co on Si (100) by surfactant (Sb) mediated growth

Dash, Saroj P.; Goll, D.; Carstanjen, H. D.

doi:10.1007/s00339-009-5276-1

Cited by 9 publications

(6 citation statements)

References 21 publications

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“…The obtained result is found to be in reasonable agreement with the experimental results reported in Refs. [12][13][14][15]. and by us.…”

Section: Resultsmentioning

confidence: 85%

“…The applications of cobalt thin films include, for example, spintronic devices, such as spin valves, magnetic tunnel junctions and magnetic random access memories, microelectromechanical systems, and logic devices and circuits [14][15][16][17]. Recently, thin Co films have been also used to investigate small and isolated skyrmions [18] which presence can be associated with logical one state and in consequence used to construct novel memories [19].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of thermally evaporated nanocrystalline thin cobalt films

et al. 2017

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structures are of large importance. From the practical point of view, they are very significant for tailoring of the specimens with the required properties. In particular, they allow to develop high-density magnetic and magneto-optic recording media, modern recording heads, high-performance permanent magnets, magnetic sensors, and transformer steel sheets [1,2]. The knowledge of the magnetic domain behavior in relation to the morphological structure of the specimens is also important for theoretical modeling of magnetic properties [1,2].Thin magnetic films attract large attention from the fundamental as well as technological point of view. On the fundamental side, they exhibit different magnetic properties, such as magnetic anisotropy [3], magnetic microstructure [4], coercivity [5], and magnetoresistance [6], depending on their thickness, composition, crystalline structure, and preparation conditions. From the technological point of view, thin magnetic films have a number of applications; for example, they are used in magnetic information storage media, magneto-optic recording media, magnetic devices, and sensors [1,2].In particular, cobalt thin films have been the subject of wide and intense study in recent years. They can be prepared by various techniques, for example by sputtering, thermal evaporation, electron beam evaporation, molecular beam epitaxy, pulsed laser deposition, electrodeposition, and chemical vapor deposition [7][8][9]. The obtained films are usually nanocrystalline in nature and possess specific, improved mechanical, physical, magnetic, and chemical properties in comparison with conventional microcrystalline counterparts. Depending on the film thickness as well as the preparation method and conditions used, cobalt thin films exhibit a wide range of morphological and magnetic properties, and especially various magnetic domain structures with inplane and outofplane magnetization [10][11][12][13]. AbstractIn this paper, a study has been made of nanocrystalline thin cobalt films with thicknesses in the range from 10 to 60 nm. The films were thermally evaporated at incidence angle of 0° in a vacuum of about 10 − 5 mbar. The morphological structure of the films consists of nanocrystalline grains regular in shape and densely packed. As the film thickness is increased from 10 to 60 nm, the average grain size increases from 22.0 to 28.9 nm. The films crystallize mainly in the hexagonal close-packed phase of cobalt. The magnetic structure is composed of domains. In films with thicknesses in the range from 10 to 40 nm, the domains are magnetized in the plane of the film, while films with thicknesses of 50 and 60 nm possess both inplane and perpendicular magnetization components. The domains with inplane magnetization are irregular in shape and typically from a few to 10 mm in size, whereas the domains with perpendicular magnetization form a fine maze stripe pattern of the order of 100 nm in width.

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“…The obtained result is found to be in reasonable agreement with the experimental results reported in Refs. [12][13][14][15]. and by us.…”

Section: Resultsmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Investigation of thermally evaporated nanocrystalline thin cobalt films

et al. 2017

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“…For higher coverage various silicide phases start to grow at the surface, but no pure Co film, even at the highest coverage (2.93 ML of Co) is investigated in this study. In order to reduce the in-diffusion of Co and the outdiffusion of Si and to enhance the growth of layers of pure Co two ways were followed in two subsequent investigations: (a) Co deposition was done while keeping the substrate at lower temperature, -60 • C [17]; (b) a thin layer of surfactant (1 ML of Sb) was used to reduce the amount of out-diffusion of Si to the surface during Co deposition [18]. Both techniques were helpful to reduce the silicide formation to some extent but could not stop it in total.…”

Section: The Direct Co-si (100) (Schottky) Interfacementioning

confidence: 99%

“…In this way they give information about the sharpness of the interface and the homogeneity of the Co and MgO thin films and allow in particular identifying various types of cobalt silicides as a function of depth. The data on the Co-Si Schottky interface have been published before in three publications [16][17][18] and are here summarized in a comparative way. The data on the MgO tunnel barrier are new.…”

Section: Introductionmentioning

confidence: 99%

Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering

Dash

Goll

Kopold

et al. 2012

Advances in Materials Science and Engineering

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In order to obtain high spin injection efficiency, a ferromagnet-semiconducor Schottky contact must be of high crystalline quality. This is particularly important in the case of ferromagnet-silicon interfaces, since these elements tend to mix and form silicides. In this study Co-Si (100) interfaces were prepared in three different ways: by evaporation at room temperature, low temperature (), and with Sb as surfactant, and their interface structures were analyzed by high-resolution RBS (HRBS). In all cases more or less strong in-diffusion of Co with subsequent silicide formation was observed. In order to prevent the mixing of Co and Si, ultra thin MgO tunnel barriers were introduced in-between them. In situ HRBS characterization confirms that the MgO films were very uniform and prevented the mixing of the Si substrate with deposited Co and Fe films effectively, even at .

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“…(c alues for polycrystalline case) have been used in different types of multilayers. 3,25,[31][32][33][34][35] It has been demonstrated that surfactant floats at the surface balancing the c of the elements, suppress surface diffusion and prevents island formation. 18,[36][37][38][39][40] To act as a good surfactant an element must have relatively smaller c and larger volume which promotes layer by layer growth and inhibits its incorporation.…”

Section: Introductionmentioning

confidence: 99%

Study of surfactant mediated growth of Ni/V superlattices

Amir

Gupta

Potdar

et al. 2013

Journal of Applied Physics

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The Ni/V multilayers are useful as soft x-ray mirrors, polarizers, and phase retarders. For these applications, it is necessary that the interfaces roughness and interdiffusion must be as small as possible. The V-on-Ni and Ni-on-V interfaces are asymmetric due to the difference in the surface free energy of Ni and V. In this work, we report Ag surfactant mediated growth of Ni/V superlattices prepared using ion beam sputter deposition technique. These superlattices were studied using x-ray and neutron scattering techniques. It was found that when added in an optimum amount, Ag surfactant results in reduced interface roughness and interdiffusion across the interfaces. Obtained results can be understood with the surfactant floating-off mechanism leading to a balance in the surface free energy of Ni and V. V

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Improvement of interface structure and magnetic properties of Co on Si (100) by surfactant (Sb) mediated growth

Cited by 9 publications

References 21 publications

Investigation of thermally evaporated nanocrystalline thin cobalt films

Investigation of thermally evaporated nanocrystalline thin cobalt films

Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering

Study of surfactant mediated growth of Ni/V superlattices

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