Improvement of Intermodulation Distortion Asymmetry Characteristics With Wideband Microwave Signals in High Power Amplifiers

Takenaka, I.; Ishikura, K.; Takahashi, H.; Hasegawa, Kouichi; Asano, Kōichi; Iwata, N.

doi:10.1109/tmtt.2008.923365

Cited by 24 publications

(13 citation statements)

References 15 publications

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“…The requirement of large supply ground/inductance for the back-off operation brings additional ground and supply resistance, which causes efficiency degradation. In addition, the large supply inductance degrades the ACLR performance of the amplifier for wideband modulated signals, since the finite impedance at the baseband frequencies causes supply ripple and worsens the third-order distortion of the amplifier [14].…”

Section: A Primary Coil Power Combining Transformersmentioning

confidence: 99%

Dual-Mode CMOS Doherty LTE Power Amplifier With Symmetric Hybrid Transformer

Kaymaksüt

Reynaert

2015

IEEE J. Solid-State Circuits

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This paper presents a dual-mode Doherty long-term evolution (LTE) power amplifier (PA) for efficiency enhancement at power back-off. The amplifier utilizes transformer-based Doherty operation to achieve high back-off efficiency with good linearity. In addition, the PA has two power modes to further reduce the power consumption when low output power is required. The PA combines four push-pull amplifiers by using an symmetrical hybrid transformer that ensures low combining loss and high amplifier efficiency. The two-stage LTE amplifier is fabricated in standard 40 nm CMOS technology and it achieves 28 dBm output power with 1.5 V supply. The peak power-added efficiency (PAE) of the amplifier is 34% and the PAE at 6 dB and 12 dB back-off levels are still as high as 25.5% and 19.7% respectively. The amplifier is tested with 20 MHz LTE signal and it satisfies the stringent ACLR and EVM requirements at 23.4 dBm output power with a PAE of 23.3%. In addition, the amplifier achieves 18.4% PAE when 6 dB lower power is transmitted and 11.1% PAE at 12 dB back-off under LTE modulation.

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Section: A Primary Coil Power Combining Transformersmentioning

confidence: 99%

Dual-Mode CMOS Doherty LTE Power Amplifier With Symmetric Hybrid Transformer

Kaymaksüt

Reynaert

2015

IEEE J. Solid-State Circuits

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“…IMD asymmetry is another important phenomenon related with input baseband impedance and bias level [14–16]. One of the IMD asymmetry terms comes from mixing of g m2 (second‐order transconductance) and the baseband impedance [14].…”

Section: Linearity Versus Biasmentioning

confidence: 99%

A mixed bias‐mode power amplifier for WCDMA applications

Lee

et al. 2011

Micro & Optical Tech Letters

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“…Our methodology to facilitate accurate distortion simulations, along the lines of [1][2][3][4][5][6][7][8][9], requires the circuit components surrounding a nonlinear device under test (DUT) to be characterized in terms of their S-parameter responses. The S-parameters must be measured at all frequency components that play a role in intermodulation distortion and harmonics including frequencies from baseband to the fundamental band to the highest harmonic of interest.…”

Section: Characterization Of Baseband Networkmentioning

confidence: 99%

“…Reference [8] developed a metric to quantify memory effects, including those introduced by a frequencydependent baseband impedance. Reference [9] illustrated that by modifying the baseband circuit, improved power amplifier designs can be obtained.…”

Section: Introductionmentioning

confidence: 99%

Representing bias-network baseband characteristics when simulating intermodulation distortion

Olsen

Sweeney

Remley³

2010

2010 76th ARFTG Microwave Measurement Conference

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We assess the expected impact that incorrect representation of the bias network will have on simulations of intermodulation distortion by quantifying the range of impedance values of several real baseband components, including bias tees, cables, and bias supply settings. We then introduce a table-based method to incorporate these elements in circuit simulations and verify its ability to improve prediction of intermodulation distortion. With this method, we are able to predict the third-order intermodulation distortion products to within 0.25 dB in the weakly nonlinear regime for a variety of baseband components. Use of the method enables improved model parameter extraction because only the device model itself remains in question if simulation and measurement results differ.

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Improvement of Intermodulation Distortion Asymmetry Characteristics With Wideband Microwave Signals in High Power Amplifiers

Cited by 24 publications

References 15 publications

Dual-Mode CMOS Doherty LTE Power Amplifier With Symmetric Hybrid Transformer

Dual-Mode CMOS Doherty LTE Power Amplifier With Symmetric Hybrid Transformer

A mixed bias‐mode power amplifier for WCDMA applications

Representing bias-network baseband characteristics when simulating intermodulation distortion

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