Improvement of magnetic property of GaMnN by codoping of Mg

Abstract

GaMnN and Mg-codoped GaMnN films were grown in molecular beam epitaxy using a GaN single precursor. The structural, electrical, and magnetic properties were examined. The Mg-codoped GaMnN layers revealed room-temperature ferromagnetism. Codoping with Mg reduces the Mn incorporation, but increases the conductivity of the GaMnN films. At the same time, the saturation magnetization and coercivity have increased at room temperature. As this improvement was obtained with much reduced Mn concentration of ∼0.3%, the crucial role of the carriers for carrier-induced ferromagnetism in magnetic semiconductors is observed.

Effect of annealing on the electric and magnetic properties of GaMnAs and Be-codoped GaMnAs

“…The Curie temperature (T C ) of GaMnAs, however, was limited to $110 K due to segregation of the second phase, MnAs, when the Mn incorporation exceeded the solid solubility limit in GaAs. In the meantime, the authors observed an enhancement of the magnetization in GaMnN via Mg-codoping [8,9]. The enhancement was attributed to the carrier-mediated ferromagnetism promoted by an increase of hole carriers that mediate Mn ions.…”

A comparative study on Be and Mg doping in GaN films grown using a single GaN precursor via molecular beam epitaxy

“…Furthermore, recently, it began to attract great attention in the field of spintronics as a candidate for the room temperature operating dilute magnetic semiconductors (DMS) [3][4][5]. While the progresses of the GaN-based DMS are actively on the way, the authors emphasized the importance of the high conductivity of the DMS to expose the magneto-transport properties [6,7]. In either optical or magnetic applications, high doping of impurities, particularly of p-type, has been a crucial issue for high performance of the devices.…”

Study of structures and magnetic properties of single crystalline HVPE–GaMnN films

“…A number of different methods were successfully used for the synthesis of spintronics materials based on the III-V semiconductors, such as ion implantation [10,11], MOCVD [12], MBE [13][14][15][16], horizontal hydride vapor-phase epitaxy (HVPE) [17] and others. Clear signatures of room temperature ferromagnetism were observed; the Curie temperature in most GaN-based DMSs was found to be in the range 220-400 K [18,19], and an estimated T C of 940 K was reported [20].…”