Improvement of mask write time for curvilinear assist features at 22nm

Fujimura, Aki; Bork, Ingo; Kiuchi, Taiichi; Komagata, Tadashi; Nakagawa, Yasutoshi; Hagiwara, Kaoru; Hara, Daisuke

doi:10.1117/12.864094

Cited by 14 publications

(5 citation statements)

References 2 publications

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“…4,5 Recently, D2S has introduced the concept of model-based mask data preparation by simulating the electron beam (e-beam) mask writing process. [6][7][8][9] Their approach operates on the mask that has been optimized by pixel-based OPC. 24,25 They place overlapping shots in such a way that the simulated mask image approximates the desired target mask.…”

Section: Model Based Fracturingmentioning

confidence: 99%

Shot overlap model-based fracturing for edge-based OPC layouts

Jiang

Zakhor

2014

SPIE Proceedings

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In this paper, we develop a novel fracturing algorithm with shot overlap that is tailored towards rectilinear masks, such as those generated via edge based OPC software. Our proposed fracturing algorithm generates both the location and dosage of shots given the mask layout and mask making parameters. In the first step we heuristically cover the mask polygon with overlapping shots. Next, we incorporate the forward scattering and resist model in a least squares problem to compute the best dosage for all shots. Finally, we update the locations of the shot edges by computing the edge placement error between our simulated contour and the desired contour. One unique feature of our algorithm is that it can readily trade off between edge placement error and shot count by adjusting two input parameters. Compared to a commercially available non-overlapping shot software package, for a 400µm × 400µm micron SRAM unit with about 1 million polygons, our algorithm results in a 23% reduction in shot count, while increasing the weighted average EPE from 0.7 to 1 nanometers.

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Section: Model Based Fracturingmentioning

confidence: 99%

Shot overlap model-based fracturing for edge-based OPC layouts

Jiang

Zakhor

2014

SPIE Proceedings

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“…3 The development of data handling techniques such as overlapping shaped beam exposures and circular beams for curved features will help improve performance but may not always be sufficient.…”

Section: Mitigation Optionsmentioning

confidence: 99%

Fast mask writers: technology options and considerations

Litt¹,

Groves²,

Hughes³

2011

Alternative Lithographic Technologies III

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The semiconductor industry is under constant pressure to reduce production costs even as the complexity of technology increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which have added to the complexity of making masks because of the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools.Low-k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer.It has been estimated that funding on the order of $50M to $90M for non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development poses a high risk for an individual supplier. The structure of the mask fabrication marketplace separates the mask writer equipment customer (the mask supplier) from the final customer (wafer manufacturer) that will be most effected by the increase in mask cost that will result if a high speed mask writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed.Because SEMATECH's member companies strongly support a multi-beam technology for mask writers to reduce the write time and cost of 193 nm and EUV masks, SEMATECH plans to pursue an advanced mask writer program in 2011 and 2012.

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“…Optimization based fracture has been suggested as one method to enable writing of curvilinear masks within a reasonable shot count [6]. Optimization based fracture allows for the input layout to be represented by overlapping and non-abutting shapes.…”

Section: Optimized-based Fracturementioning

confidence: 99%

Mask write time reduction: deployment of advanced approaches and their impact on established work models

et al. 2012

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The extension of 193nm exposure wavelength to smaller nodes continues the trend of increased data complexity and subsequently longer mask writing times. In particular inverse lithography methods create complex mask shapes. We introduce a variety of techniques to mitigate the impact -data simplification post-optical proximity correction (OPC), LShots, multi-resolution writing (MRW) and optimization based fracture. Their potential for shot count reduction is assessed. All of these techniques require changes to the mask making work flow at some level -the data preparation and verification flow, the mask writing equipment, the mask inspection and the mask qualification in the wafer manufacturing line. The paper will discuss these factors and conduct a benefit -effort assessment for the deployment. Some of the techniques do not reproduce the originally targeted mask shape. The impact of the deviations will be studied at wafer level with simulations of the exposure process and quantified as to their impact on the exposure process window. Based on the results of the assessment a deployment strategy will be discussed.

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Improvement of mask write time for curvilinear assist features at 22nm

Cited by 14 publications

References 2 publications

Shot overlap model-based fracturing for edge-based OPC layouts

Shot overlap model-based fracturing for edge-based OPC layouts

Fast mask writers: technology options and considerations

Mask write time reduction: deployment of advanced approaches and their impact on established work models

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