2011
DOI: 10.1007/s11051-011-0446-4
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Improvement of n-ZnO/p-Si photodiodes by embedding of silver nanoparticles

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Cited by 13 publications
(6 citation statements)
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“…But synthesis of p-type ZnO is a very tedious task. To overcome such a problem, one method is to develop ZnO-based heterojunction diodes , having an n-type ZnO layer rich in donor defects and p-type layer of semiconductors rich in acceptor defects such as p-GaN, p-SiC, and p-Si . Many researchers have successfully developed heterojunction diodes.…”
Section: Application Of Tm Znomentioning
confidence: 99%
“…But synthesis of p-type ZnO is a very tedious task. To overcome such a problem, one method is to develop ZnO-based heterojunction diodes , having an n-type ZnO layer rich in donor defects and p-type layer of semiconductors rich in acceptor defects such as p-GaN, p-SiC, and p-Si . Many researchers have successfully developed heterojunction diodes.…”
Section: Application Of Tm Znomentioning
confidence: 99%
“…However, in order to replace the widely used photo-multiplier tube in the area of light detection, ZnO based photodetectors need further improvement, especially in the responsivity. As a research hot spot, Surface plasmon resonance (SPR) in metallic nano-particles has attracted great interest for varieties of potential applications, such as large enhancement of sensitivity of bio-sensors [9,10] and surface enhanced Raman scattering (SERS) [11][12][13], great improvement of opto-electric conversion efficiency of solar cells [14,15] and photodetectors [16][17][18][19][20]. Sun et al realized responsivity enhancement using the structure of ZnO/Pt/MgZnO/SiO 2 and they validated that the enhancement was due to localized surface plasmons [21].…”
Section: Introductionmentioning
confidence: 99%
“…With the progress in semiconductor technology, various opto-electronic semiconductor devices have been developed to the industry and commercial applications, such as Si, 1 Ge, 2 InGaAs, 3 GaN, [4][5][6] ZnO, [7][8][9][10] and CdS [11][12][13] based photodetectors (PDs), Si 14 and GaN 15 based light-emitting diodes (LEDs), as well as Si based solar cell. 16 Recently, surface plasmon resonance has been employed to increase their performance or efficiency because it allows the coupling of more light into or out of the devices.…”
Section: Introductionmentioning
confidence: 99%
“…17,18 This provides the possibility of controllably tuning the resonance wavelength, making the metal NPs very important and promising for a wide range of applications in the opto-electronic devices. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] For these applications, their performance or efficiency all depend on the absorption range of the metal NPs and semiconductor characteristics, and the interface between the metal and the semiconductor. So a detailed study considering these issues is required.…”
Section: Introductionmentioning
confidence: 99%