Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers

Abstract

Near-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiNx interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epitaxy. Inserting the SiNx interlayer into the n-GaN underlying layer slightly reduced leakage current induced by reducing the defect density. Additionally, an enhancement of light extraction for the LED with a SiNx interlayer is expected because of the increased intensity of light scattered on the SiNx nanomask, changing the directions of propagation of light. Consequently, the emission efficiency of an LED with an in situ rough SiNx interlayer doubles that without a SiNx interlayer.

Improvement of efficiency and ESD characteristics of ultraviolet light-emitting diodes by inserting AlGaN and SiN buffer layers

“…It was found that the TD density can be lowered one order of magnitude than the conventional UVLED by inserting the SiN buffer layer. The density of dislocations is remarkably lower in GaN layers grown after SiN buffer than the density in layers obtained using the conventional process [13][14][15]. Fig.…”

“…However, such a procedure is relatively complex that inevitably results in a low production yield. Recently, it has been reported that one can reduce the defect density in nitride-based epitaxial layers using GaN-SiN as the nucleation layer [8][9][10][11][12][13][14][15]. Many nanometer-sized porous SiN layer probably serves to enhance the lateral growth, which is quite similar to that in ELO to reduce dislocation density.…”

Luminescent properties of CaTiO3:Pr thin-film phosphor deposited on ZnO/ITO/glass substrate

“…Similar works were performed for light emitting diodes (LEDs) and thin-film electroluminescence (TFEL) devices. High light extraction efficiency could be obtained by surface texturing [12], surface roughing [13], a two-dimensional surface grating [14], inserting an in situ rough SiN x [15], and introducing a two-dimensional SiO 2 nanorod pattern into the glass substrate of a TFEL [16].…”

Anisotropic coalescence behaviors of GaN islands grown by metal‐organic chemical vapor deposition

“…The FWHM of the D 0 X peak obtained from Gaussian fits is around 4 meV, indicating high optical quality of the overgrowth GaN film. As discussed in the recent work [8][9][10], the higher intensity may be used to random scattering of the light at a rough interface between the overgrown GaN and the SiO 2 over that from the interface between GaN and sapphire substrate.…”