2015
DOI: 10.1109/led.2015.2459600
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Improvement of Negative Bias Stress Stability in Mg<sub>0.03</sub>Zn<sub>0.97</sub>O Thin-Film Transistors

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Cited by 34 publications
(11 citation statements)
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“…22 The larger τ for flexible ZnO TFT under NBS indicates less charge trapping compared with the device under PBS. 23 To evaluate the mechanical stability of flexible ZnO TFTs, a set of electrical measurements under various bending radii were carried out. The device suffered from a mechanical tensile stress vertical to TFT current path as shown in Figure 7(b).…”
Section: Resultsmentioning
confidence: 99%
“…22 The larger τ for flexible ZnO TFT under NBS indicates less charge trapping compared with the device under PBS. 23 To evaluate the mechanical stability of flexible ZnO TFTs, a set of electrical measurements under various bending radii were carried out. The device suffered from a mechanical tensile stress vertical to TFT current path as shown in Figure 7(b).…”
Section: Resultsmentioning
confidence: 99%
“…The observed Zn 2p peak shied toward slightly higher binding energies of doped ZnO NPs and this is believed to be a result of the replacement of Zn 2+ by Ga 3+ and/or Mg 2+ 15,16. The known electronegativity values of Mg, Zn, Ga, and O atoms are 1.35, 1.65, 1.81, and 3.44, respectively.…”
mentioning
confidence: 88%
“…[9][10][11][12] By suppressing the defect density, the MZO significantly improves thermal and bias stabilities while possessing excellent properties of pure ZnO. [13,14] The MZO HVTFT technology has shown promise for large-area, cost-effective, and environmental-friendly applications, such as BIPV. [15,16] DOI: 10.1002/pssa.202200313…”
Section: Introductionmentioning
confidence: 99%