Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p ++ -GaN layer

Liang, Feng; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing; Liu, Wei; Li, Xiang; Liu, Shuangtao; Xing, Yufeng; Zhang, Liqun; Yang, Hui; Long, Heng; Li, Mo

doi:10.1016/j.jcrysgro.2017.03.009

Cited by 12 publications

(9 citation statements)

References 44 publications

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“…It means that C impurity has an influence on the ratio of BL and YL bands in u-GaN samples A0–I0. It is known that C is one of the most important impurity-induced defects in in MOCVD-grown GaN and other nitride materials, which is unintentionally introduced during the epitaxial growth with MOCVD, mainly due to the presence of C in the employed organic gas precursors [27,28,29]. In addition, it is widely known that the C impurity in GaN acts not only as a shallower acceptor, but may also be a deeper acceptor.…”

Section: Resultsmentioning

confidence: 99%

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN

et al. 2018

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Both yellow luminescence (YL) and blue luminescence (BL) bands of GaN films have been investigated for decades, but few works report the relationship between them. In this study, two sets of GaN samples grown via metalorganic chemical vapor deposition (MOCVD) were investigated. A close relationship was found between the YL and BL bands for unintentionally doped GaN and Si-doped GaN samples, both of which were grown without intentional acceptor doping. It was found that the intensity ratio of blue luminescence to yellow luminescence (IBL/IYL) decreases sharply with the increase in carbon impurity concentration, even though both IBL and IYL increase obviously. It was also found that IBL/IYL decreases sharply with the increase in Si doping concentration. It is suggested that the C and Si impurities play important role in linkage and competition of the blue and yellow luminescence.

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Section: Resultsmentioning

confidence: 99%

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN

et al. 2018

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“…11) In the case of p-type GaN with an intentional magnesium (Mg) dope, unintentionally doped carbon compensates for the effect of Mg to increase the resistivity and worsen the ohmic contact. 12,13) Moreover, carbon impurities were known to be one of the causes of the yellow luminescence observed in GaN. 7,14,15) The halide (hydride) vapor phase epitaxy (HVPE) method is also widely used for the growth of GaN.…”

Section: Introductionmentioning

confidence: 99%

GaN growth via tri-halide vapor phase epitaxy using solid source of GaCl₃: investigation of the growth dependence on NH₃ and additional Cl₂

Takekawa

Takahashi

Kobayashi

et al. 2019

Jpn. J. Appl. Phys.

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Gallium nitride (GaN) growth via a tri-halide vapor phase epitaxy method using a solid source of GaCl3 and gaseous NH3 was investigated both on Ga-polar and N-polar GaN templates. The relationship between gallium precursor molecule and growth polarity was clarified; it was found that a small amount of GaCl3 could be reduced by H2 originating from the decomposition of NH3 to produce GaCl, and additional Cl2 could suppress the reduction process. Accordingly, GaCl3 was found to be a proper Ga precursor for N-polar GaN growth, whereas GaCl was the proper precursor for Ga-polar GaN growth. The state of the Ga precursor molecule could be predicted by thermodynamic analysis. Furthermore, the decomposition ratio of NH3 could be determined by a combination of the experimental results and the calculated value of the thermodynamic analysis.

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“…The concentration of dopants at the level of 10 20 at/cm 3 with 10% activation of acceptors using the CBr 4 precursor in the PA-MBE method was reported [92]. However, for the MOCVD growth method, the literature was focused on controlling unintentional carbon incorporated during GaN layer growth, because of carbon-contained organometallic precursors [93][94][95].…”

Section: Carbon Properties In Ganmentioning

confidence: 99%

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

2019

Acta Phys. Pol. A

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The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes limitations not only on the purity of the materials under processing but, also, on the detection and measurement of the content of these species. Specifically, a review of electrical and optical properties, based on the available literature, is presented for: hydrogen in GaN, ZnO and SiC, carbon in GaN and ZnO, nitrogen in ZnO and SiC and oxygen in GaN and SiC. Further, the refinements of the SIMS (Secondary Ions Mass Spectrometry) analytical technique, aiming to improve the sensitivity and detection limit of atmospheric elements, are described in detail. These include the choice of primary beam type and current, type of secondary single or cluster ions, geometry and vacuum conditions. Finally, the evaluated so-called RSF parameters (Relative Sensitivity Factors) are given for each atom-semiconductor pair, converting raw data to the absolute value of concentration.

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Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p ++ -GaN layer

Cited by 12 publications

References 44 publications

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN

GaN growth via tri-halide vapor phase epitaxy using solid source of GaCl₃: investigation of the growth dependence on NH₃ and additional Cl₂

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

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Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p ++ -GaN layer

Cited by 12 publications

References 44 publications

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN

GaN growth via tri-halide vapor phase epitaxy using solid source of GaCl3: investigation of the growth dependence on NH3 and additional Cl2

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

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GaN growth via tri-halide vapor phase epitaxy using solid source of GaCl₃: investigation of the growth dependence on NH₃ and additional Cl₂