2020
DOI: 10.1016/j.synthmet.2020.116537
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Improvement of OLED performances by applying annealing and surface treatment on electro-deposited CuSCN hole injection layer

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Cited by 15 publications
(13 citation statements)
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“…In organic light-emitting diodes (OLEDs), CuSCN has been traditionally used as an HTL to improve the charge injection efficiency. Its high optical transparency suppresses any parasitic absorption of the light generated from the active layer. In organic and perovskite solar cells (OSCs and PSCs), the CuSCN layer allows the extraction of holes from the photoactive layer, again suppressing any parasitic absorption and allowing the incident radiation of all wavelengths to reach the photoactive layer. Theoretical studies have linked the advantages of CuSCN as an HTL to its usual lack of any deep carrier trap states and its minimal valence band offset with the archetypal perovskite CH 3 NH 3 PbI 3 . In ultraviolet-based photodetectors (UVPDs), the wide bandgap of CuSCN allows unhindered high absorption in the UV region and could form not only metal–semiconductor–metal (MSM) UVPDs but also p-n junction UVPDs when combined with n -type material. Finally, CuSCN is one of the few materials for p -channel thin film transistor (TFT) fabrication due to its hole transport selectivity. …”
mentioning
confidence: 99%
“…In organic light-emitting diodes (OLEDs), CuSCN has been traditionally used as an HTL to improve the charge injection efficiency. Its high optical transparency suppresses any parasitic absorption of the light generated from the active layer. In organic and perovskite solar cells (OSCs and PSCs), the CuSCN layer allows the extraction of holes from the photoactive layer, again suppressing any parasitic absorption and allowing the incident radiation of all wavelengths to reach the photoactive layer. Theoretical studies have linked the advantages of CuSCN as an HTL to its usual lack of any deep carrier trap states and its minimal valence band offset with the archetypal perovskite CH 3 NH 3 PbI 3 . In ultraviolet-based photodetectors (UVPDs), the wide bandgap of CuSCN allows unhindered high absorption in the UV region and could form not only metal–semiconductor–metal (MSM) UVPDs but also p-n junction UVPDs when combined with n -type material. Finally, CuSCN is one of the few materials for p -channel thin film transistor (TFT) fabrication due to its hole transport selectivity. …”
mentioning
confidence: 99%
“…Figure 3 demonstrate the contact angles of water with PEDOT:PSS and PEDOT:PSS/QDs with different concentration are 12.4°, 13.5° and 18.4°, respectively. The small contact angles reveal that the hybrid PEDOT:PSS/QDs HIL has strong hydrophilic and spread-ability, resulting in a better interface and adhesion between anode and hole transporting layer ( Phatak et al, 2012 ; Tsai et al, 2020 ).…”
Section: Resultsmentioning
confidence: 99%
“…The device with the concentration of 10%MoS 2 QDs in PEDOT:PSS exhibited maximum CE of 72.7 cd A −1 and maximum luminescence of 46,354 cd m −2 with a low turn-on voltage of 3.6 V. We also demonstrate that PEDOT:PSS doped with 10%MoS 2 QDs forms more higher quality film with lower surface roughness, which are beneficial to form a better interface and adhesion between anode and hole transporting layer. ( Phatak et al, 2012 ; Tsai et al, 2020 ).…”
Section: Resultsmentioning
confidence: 99%
“…After a certain lifetime, the exciton pair deexcites by giving photons as light [4]. OLED is a complex device compared to the LED, which is composed of seven active layers (like two charge injection layers, two transport layers, two blocking layers, and one emissive layer) between two electrodes [5][6][7]. The external quantum efficiency of OLED devices depends on the device architecture, outcoupling phenomenon, and the active layer materials [8].…”
Section: Introductionmentioning
confidence: 99%