Improvement of parameters of micro-pixel avalanche photodiodes

Sadigov, A.; Ahmadov, F.; Sadygov, Z.; Ahmadov, G.; Berikov, D.; Holík, M.; Mammadli, A.; Akbarov, R.; Nuruyev, S.; Ajdarli, K.; Garibli, Aydan; Doğanci, Emre; Mora, Y.; Yılmaz, Ercan

doi:10.1088/1748-0221/17/07/p07021

Cited by 6 publications

(2 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Detailed information about experimental setup and measurement methods was presented in [13,22]. The new readout interface has been tested with SiPM of the MAPD type [24][25][26][27][28]. The MAPDs are manufactured within the MAPD collaboration by Zecotek Photonics Inc.…”

Section: Methodsmentioning

confidence: 99%

Investigation of the possibility of a new detector based on SiPM in nuclear forensics

et al. 2023

Self Cite

View full text Add to dashboard Cite

The development of nuclear technologies, the production and active use of radioisotopes, and the production of radiopharmaceuticals, medical isotopes and other radioactive materials are increasing every year. Therefore, the importance of ensuring the safety of highly active isotopes, as well as providing the necessary instruments for measuring and identifying radioactive materials, must be taken into account. Modern equipment such as high purity germanium detectors (HPGe) is costly and requires specialized staff skills as well as special operating conditions such as low temperatures and high voltages. It is proposed to explore the possibilities of using a silicon photomultiplier (SiPM) with a deep pixel structure in nuclear gamma spectrometry, which will make it possible to increase the efficiency of scintillation detectors. The paper presents the results of a study of the newest silicon photomultipliers MAPD-3NM II assembled in a 16-element matrix, which was the detector part of the proposed LaBr3(Ce) scintillation spectrometer. The study was carried out using radioisotopes of uranium. The aim of the research is to reveal the possibility of differentiating depleted and natural uranium materials from each other without using special software by means of the proposed set of equipment.

show abstract

Section: Methodsmentioning

confidence: 99%

Investigation of the possibility of a new detector based on SiPM in nuclear forensics

et al. 2023

Self Cite

View full text Add to dashboard Cite

show abstract

“…Avalanche photodiode (APD) is a kind of semiconductor photodetector with internal gain, which has become a research hotspot in the field of weak light detection [ 1 , 2 , 3 ]. Compared with traditional photomultiplier tube, APD is preferred to be used in harsh environments due to its superiority in terms of low power consumption, long lifetime, and insensitivity to magnetic field [ 4 , 5 ]. Based on the different material band gap, the Si- and InP-based APDs as commercial devices have been widely used in detection of visible and near-infrared lights, respectively [ 6 , 7 ].…”

Section: Introductionmentioning

confidence: 99%

Focus on the Avalanche Breakdown Characteristic of Si- and InP-Based APDs Irradiated by Fast Neutrons

Kang

Xiang

et al. 2022

Micromachines

View full text Add to dashboard Cite

The Si- and InP-based APDs as the most important weak light semiconductor photodetectors to have achieved commercial success and are widely used in irradiation environments. Investigating the influencing mechanism of neutron irradiation on the above two types of APDs is of scientific and practical importance. In this paper, the dark current and gain characteristics of Si- and InP-based APDs around breakdown voltage were analyzed in detail before and after irradiation. The increase of dark current and the decrease of gain were observed for both the neutron irradiated Si- and InP-based APDs. Generation centers induced by neutrons are responsible for the increased dark current. The decrease of gain can be attributed to the increase of multiplied dark current and the change of electric field distribution in APD. The Si-based APD exhibits soft breakdown with the breakdown voltage reduced by ~8 V under the neutron fluence of 1.0 × 1012 cm−2, while the soft breakdown occurs along with a small change of breakdown voltage of ~1.5 V under the neutron fluence of 1.0 × 1013 cm−2 for InP-based APD. The difference in the change of breakdown voltage probably occurs because the Si-based APD uses p-doped Si as the multiplication layer, in which the neutron induced carrier removing effect cannot be ignored to keep the electric field distribution away from the optimal state. Therefore, using an intrinsic multiplication layer in APD is helpful to improve the neutron radiation resistance. The findings here are not only useful for the radiation hardened design of APD, but also deepen the understanding of irradiation mechanism.

show abstract

Performance of styrene polymerized plastic scintillator with micropixel avalanche photodiode

Sadigov,

Ahmadov,

Ahmadov

et al. 2024

Radiation Measurements

View full text Add to dashboard Cite

Improvement of parameters of micro-pixel avalanche photodiodes

Cited by 6 publications

References 30 publications

Investigation of the possibility of a new detector based on SiPM in nuclear forensics

Investigation of the possibility of a new detector based on SiPM in nuclear forensics

Focus on the Avalanche Breakdown Characteristic of Si- and InP-Based APDs Irradiated by Fast Neutrons

Performance of styrene polymerized plastic scintillator with micropixel avalanche photodiode

Contact Info

Product

Resources

About