2010
DOI: 10.1016/j.mee.2010.07.030
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Improvement of PMMA electron-beam lithography performance in metal liftoff through a poly-imide bi-layer system

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Cited by 14 publications
(11 citation statements)
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“…In this procedure, which is described in detail elsewhere, 21 the pattern emerges through selective removal of PMMA from the silicon wafer surface. Therefore, the bumps consist of PMMA and the flat surface between the bumps is silica.…”
Section: Resultsmentioning
confidence: 99%
“…In this procedure, which is described in detail elsewhere, 21 the pattern emerges through selective removal of PMMA from the silicon wafer surface. Therefore, the bumps consist of PMMA and the flat surface between the bumps is silica.…”
Section: Resultsmentioning
confidence: 99%
“…Polymers are materials of special importance due to their extensive applications in diverse areas of physics, chemistry, materials science, and nanoscience. For example, PMMA has been widely used as a positive electron-beam resist in electronbeam lithography, 1,2 and it is important to know the spatial distribution of the energy deposited on it to improve the resolution of the patterns made by this procedure. Also this technique can be combined with ion implantation, Rutherford backscattering, and electronic microscopy to obtain nanostructures, 3 waveguides, 4 or modify the electrical properties of materials.…”
Section: Introductionmentioning
confidence: 99%
“…PMMA is a standard, often-used photoresist in SXCM because its particular optical properties provide high resolution. PMMA is also a suitable material for the cell culturing [26][27][28]. The photoresist development required the optimized content of the developer mixture (the optimal ratio of MIBK and isopropanol).…”
Section: Optimization Of Sxcm Technique For Cell Imagingmentioning
confidence: 99%