Improvement of resolution in x-ray lithography by reducing secondary electron blur

Abstract

In x-ray lithography, the energy deposition mechanism of secondary electrons generated in the resist and Si substrate is investigated. By reducing resist thickness, the secondary electron blur is reduced because secondary electrons with high energy exit the resist before depositing energy in the lateral direction. Resolution is improved using a thin Cl-containing resist, especially in wavelengths shorter than the K-shell absorption edge of Cl atoms. The secondary electron blur in the wavelength region from 2.5 to 4.0 Å decreases using a 40-nm-thick Cl-containing resist with a bottom layer. By using an x ray in this wavelength region, the 35 nm line-and-space pattern can be resolved at a gap of 10 μm. A higher quality resist pattern can be obtained by increasing the Cl contents in the resist.

Fabrication of flexible UV nanoimprint mold with fluorinated polymer-coated PET film

“…In order to form micro- to nano-sized patterns, various lithographic technologies have been used, such as DUV photolithography [1], e-beam lithography [2,3], X-ray lithography [4,5], laser holographic lithography [6], nanosphere lithography [7], scanning probe microscopy lithography [8], and so on. Except for DUV photolithography, these conventional lithography technologies require either a complicated patterning system with a high process cost or offer limited throughput and, thus, are not suitable for mass production.…”