Improvement of single event effects in InP-based HEMT with a composite channel of InGaAs/InAs/InGaAs

Sun, Shuxiang; Xie, Xintong; Zang, Pengfei; Luo, Xiaorong

doi:10.1016/j.microrel.2023.114971

Cited by 3 publications

(1 citation statement)

References 21 publications

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“…III-V semiconductor materials, known for their superb electrical and optical properties, have garnered significant interest in various fields such as information and communication, semiconductor display and lighting, wearable devices, and aerospace [1]. Recently, indium phosphide (InP) materials have witnessed rapid development in applications such as light-emitting diodes, lasers, high-power radio frequency, photoelectric detection, and solar cells, owing to their remarkable physical attributes such as superior light absorption efficiency, high electron mobility, and exceptional thermal conductivity [2]. However, as the complexity of the structure of InP heterogeneously integrated devices escalates, the lattice constant mismatch between InP and other materials typically induces residual in-plane stress strain within the material film.…”

Section: Introductionmentioning

confidence: 99%

Study on the Influence of Plane Strain on Optical Properties of InP Materials through First-Principles Calculations

Qiao¹,

Zhi²,

Zhang

2023

E3S Web of Conf.

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This research scrutinizes the impact of plane strain on the optical characteristics of Indium Phosphide (InP) employing first-principles methodology, grounded on the Density Functional Theory (DFT). The findings suggest that the peaks of the spectral response curves of the dielectric function, refractive index, extinction coefficient, optical absorption coefficient, and reflection coefficient of InP, when subjected to plane tension strain, shift towards lower energy of electromagnetic wave frequency in the horizontal coordinate. Concurrently, static quantities such as the dielectric coefficient, refractive coefficient, and reflection coefficient of InP demonstrate an upward trend with an increase in the plane tension strain. Intriguingly, the influence of compressive strain on the photoelectric response of InP manifests contrary behavior to that of the tensile strain.

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Section: Introductionmentioning

confidence: 99%

Study on the Influence of Plane Strain on Optical Properties of InP Materials through First-Principles Calculations

Qiao¹,

Zhi²,

Zhang

2023

E3S Web of Conf.

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Assessing single event upset susceptibility of InAlN HEMT with cap layer under heavy-ion environment

Kumari,

Gupta,

Saxena

2024

Microsyst Technol

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Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT

Adekoya,

Liu,

Wang

et al. 2024

Phys. Scr.

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This paper presents single-event transient (SET) mechanisms on a 3D NPN-SiGe HBT structure using Silvaco TCAD simulations under three conditions. The three conditions were the linear energy transfer (LET), striking angle, and bias voltage. A three-dimensional (3D) structure of the NPN-SiGe HBT was built on the DevEdit simulator and simulated on Deckbuild using device and radiation effect simulations. The length, breadth, and height of the structure were; 6.0 µm, 4.55 µm, and 2.5 µm, with doping concentrations of cm3 and cm3. The results obtained show that the TCAD simulation on the three conditions significantly influences the trends of heavy ion transient current and collected charge. The results reveal that the increased collected charge and wider pulse width result from the bipolar amplification effect. The drift and diffusion mechanisms also influence the increase in the emitter current as the ion loses energy along the trajectory path.

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Improvement of single event effects in InP-based HEMT with a composite channel of InGaAs/InAs/InGaAs

Cited by 3 publications

References 21 publications

Study on the Influence of Plane Strain on Optical Properties of InP Materials through First-Principles Calculations

Study on the Influence of Plane Strain on Optical Properties of InP Materials through First-Principles Calculations

Assessing single event upset susceptibility of InAlN HEMT with cap layer under heavy-ion environment

Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT

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