Improvement of the Frequency Characteristics of Graphene Field-Effect Transistors on SiC Substrate

Chen, Yu; He, Zezhao; Song, Xubo; Liu, Q. B.; Han, Tao; Dun, Shaobo; Wang, J. J.; Zhou, Chuangjie; Guo, Jenhwa; Li, Yuanjie; Feng, Zhihong; Cai, Shujun

doi:10.1109/led.2017.2734938

Cited by 29 publications

(20 citation statements)

References 17 publications

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“…Then, we could estimate the values of f T and f max to be 23 GHz•µm and 3.2 × 10 2 GHz•µm, respectively. These estimated values are comparable to or larger than those previously reported experimental values [56]. Especially, the estimated values of f max is promising because the degradation of f max has been the obstacle toward the high-frequency device application of GFET.…”

Section: Device Performances Of Fet Using Flg On the Hybrid Sicsupporting

confidence: 82%

High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications

et al. 2021

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Graphene is promising for next-generation devices. However, one of the primary challenges in realizing these devices is the scalable growth of high-quality few-layer graphene (FLG) on device-type wafers; it is difficult to do so while balancing both quality and affordability. High-quality graphene is grown on expensive SiC bulk crystals, while graphene on SiC thin films grown on Si substrates (GOS) exhibits low quality but affordable cost. We propose a new method for the growth of high-quality FLG on a new template named “hybrid SiC”. The hybrid SiC is produced by bonding a SiC bulk crystal with an affordable device-type wafer and subsequently peeling off the SiC bulk crystal to obtain a single-crystalline SiC thin film on the wafer. The quality of FLG on this hybrid SiC is comparable to that of FLG on SiC bulk crystals and much higher than of GOS. FLG on the hybrid SiC exhibited high carrier mobilities, comparable to those on SiC bulk crystals, as anticipated from the linear band dispersions. Transistors using FLG on the hybrid SiC showed the potential to operate in terahertz frequencies. The proposed method is suited for growing high-quality FLG on desired substrates with the aim of realizing graphene-based high-speed devices.

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Section: Device Performances Of Fet Using Flg On the Hybrid Sicsupporting

confidence: 82%

High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications

et al. 2021

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“…Two different top-gate bilayer graphene FETs fabricated on SiC substrates with gate lengths of 60 nm [3] and 80 nm [7] and gate widths w g s of 2 × 8 µm and 2 × 15 µm, respectively, have been characterized using the small-signal model proposed here. Fabrication details of each device can be found in [15] for the shortest device [3] and in [16] for the largest one [7]. Table I lists the parameter values of the EC in Fig.…”

Section: Equivalent Circuit and Parameter Extractionmentioning

confidence: 99%

“…In general, values of R c can be obtained either by test structure characterization [1], [2], [7], by analytical models [6], by S-parameters measurements [3], [4], [8], by I-V-based extraction methods [12] or by a fitting process [5]. Regardless of the method to obtain it, in small-signal equivalent circuits (ECs) of GFETs, the extracted R c has been usually either considered in the extrinsic part of the model only [1], [3], [5] or included in the intrinsic circuit [2], [4], [7]. It must be noticed that standard de-embedding procedures with test dummy patterns can not subtract the total effect of R c from the intrinsic device.…”

Section: Introductionmentioning

confidence: 99%

“…In contrast to other approaches where R C is lumped either in the extrinsic [1], [3], [5] or intrinsic [2], [4], [7] part of the EC, in this work a straightforward method considering asymmetric contact resistances in the EC separated from the intrinsic and extrinsic networks has been presented. The proposed approach has been validated with experimental data from two GFET technologies.…”

Section: Introductionmentioning

confidence: 99%

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A small-signal GFET equivalent circuit considering an explicit contribution of contact resistances

Pacheco-Sanchez,

Ramos-Silva,

Ramirez-Garcia

et al. 2020

Preprint

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A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of contact resistances. A methodology to separate the contact resistances from extrinsic parameters, obtained by a de-embedding process, and intrinsic parameters of the circuit is considered. The experimental highfrequency performance of two different GFET technologies is properly described by the proposed small-signal circuit. The correct detachment of contact resistances from the internal transistor enables to study their impact on the intrinsic cutoff frequency of the devices under study.

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“…GFETs with intrinsic cut‐off frequency ( f T ) of 427 GHz and maximum oscillation frequency ( f max ) of 220 GHz have been demonstrated on a rigid substrate . For flexible GFETs, the cut‐off frequency reached 198 GHz and the maximum oscillation frequency reached 34 GHz, respectively, which fall far short of that of a GFET on a rigid substrate.…”

Section: Small Signal Model Parameters Of Gfet With Gate Length Of 50mentioning

confidence: 99%

High‐Frequency Flexible Graphene Field‐Effect Transistors with Short Gate Length of 50 nm and Record Extrinsic Cut‐Off Frequency

Chen

Song

et al. 2018

Physica Rapid Research Ltrs

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Flexible graphene field effect transistors (GFETs) are fabricated on a polyimide (PI) substrate by an improved self‐aligned fabrication procedure. Short gate length of 50 nm is achieved. Ohmic contact resistance is depressed. The prepared GFET shows comparable intrinsic cut‐off frequency and maximum oscillation frequency of 116 and 110 GHz, respectively. The high frequency of flexible GFET demonstrated here paves the way for applications which require high flexibility and radio frequency operations.

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Improvement of the Frequency Characteristics of Graphene Field-Effect Transistors on SiC Substrate

Cited by 29 publications

References 17 publications

High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications

High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications

A small-signal GFET equivalent circuit considering an explicit contribution of contact resistances

High‐Frequency Flexible Graphene Field‐Effect Transistors with Short Gate Length of 50 nm and Record Extrinsic Cut‐Off Frequency

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