Improvement of the interface quality between Zn (O,S,OH)_x buffer and Cu(InGa)(SeS)₂ surface layers to enhance the fill factor over 0.700

Abstract

For realizing the proof of mass production capability or a move toward a GW/a production, 16%-efficiency project has been started setting the target of each parameter as V oc : 0.685 V/cell, FF: 0.735 and J sc : 31.8 mA/cm 2 . Up to FY2008, the target of each parameter independently has been achieved except the efficiency. All of our research works is currently focused on the FF in order to achieve the FF of over 0.73 consistently by adjusting the two resistances (R sh and R s ) in the monolithically integrated 30cmx30cm-sized circuits. To improve the FF, double buffer structure with CBD-Zn(O,S,OH) x and MOCVD-ZnO is proposed and the thickness is adjusted by optimizing the R s and the R sh . As the result, FF of over 0.7 has been achieved for the first time in our CIS R&D since FY1993.