2009
DOI: 10.1016/j.powtec.2009.05.005
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Improvement of the luminescence properties of CaTiO3:Pr obtained by modified solid-state reaction

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Cited by 32 publications
(17 citation statements)
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“…Luminescence of the titanate-type compounds could be found immensely useful in optoelectronic applications. TiO 2 possess good mechanical resistance and stability, and therefore it has widely been used in the development of certain stable host matrices like BaTiO 3 , SrTiO 3 , CaTiO 3 and a few TiO 2 -based oxide composites like TiO 2 -SiO 2 , TiO 2 -CeO 2 , TiO 2 -ZrO 2 and TiO 2 -Fe 2 O 3 [8][9][10]. BaTiO 3 and SrTiO 3 , are two known examples, which attract a renewed interest due to their efficient luminescence performance from perovskite structured materials [11].…”
Section: Introductionmentioning
confidence: 99%
“…Luminescence of the titanate-type compounds could be found immensely useful in optoelectronic applications. TiO 2 possess good mechanical resistance and stability, and therefore it has widely been used in the development of certain stable host matrices like BaTiO 3 , SrTiO 3 , CaTiO 3 and a few TiO 2 -based oxide composites like TiO 2 -SiO 2 , TiO 2 -CeO 2 , TiO 2 -ZrO 2 and TiO 2 -Fe 2 O 3 [8][9][10]. BaTiO 3 and SrTiO 3 , are two known examples, which attract a renewed interest due to their efficient luminescence performance from perovskite structured materials [11].…”
Section: Introductionmentioning
confidence: 99%
“…Finally, there may exist some efficient energy transfer between the Zn 2+ and Eu 3+ ions, which improves luminous intensity of Eu 3+ ions [38] . The incorporated Zn will form defect centers under the conduction band of the CaTiO 3 host, which can store free electrons and make the energy transfer from CaTiO 3 host to Eu 3+ ions more effective.…”
Section: Photoluminescence Propertiesmentioning
confidence: 99%
“…There are some researches on CaTiO 3 -based phosphor materials, but most studies have focused on Pr 3 þ -doped long persistent phosphorescent phosphors [13][14][15], which are excited by UV in the range of 150-300 nm. However, this type of phosphor cannot match the promising InGaN-based chips.…”
Section: Introductionmentioning
confidence: 99%