Improvement of thermal stability of Ni silicide on N+–Si by direct deposition of group III element (Al, B) thin film at Ni/Si interface

Formation of uniform and homogeneous ternary NiSi2−x Al x on Si(001) by an Al interlayer mediation

“…Single crystalline NiSi 2 , which has uniform and homogeneous NiSi 2 /Si interface, can be realized on Si substrates using ultra-thin Ni layers (<5 nm) 7) or introducing other elements, such as Ti, 8) P, 9) Ga 10) and Al. [11][12][13] For instance, Mogilatenko et al 12) investigated Ni x Al y alloy reacted with Si under different annealing temperatures and found that the interfacial roughness of silicide layers strongly depended on Al contents. Tsutsui et al 13) investigated the effect of Al layers' position on the Ni/Si solid state reactions and found that the Al layer was effective only when it was located at the Ni/Si interface.…”

“…[11][12][13] For instance, Mogilatenko et al 12) investigated Ni x Al y alloy reacted with Si under different annealing temperatures and found that the interfacial roughness of silicide layers strongly depended on Al contents. Tsutsui et al 13) investigated the effect of Al layers' position on the Ni/Si solid state reactions and found that the Al layer was effective only when it was located at the Ni/Si interface. Our previous work 14) has also shown that a 3 nm Al interlayer was efficient to mediate the epitaxial growth of NiSi 0.7 Ge 0.3 on relaxed Si 0.7 Ge 0.3 .…”