Improvement on Industrial n-type Bifacial Solar Cell with &gt;20.6% Efficiency

Chang, Hung Chih; Huang, Chih Jeng; Hsieh, Po Tsung; Mo, Wei Cheng; Yu, Shu Hung; Li, Chi Chun

doi:10.1016/j.egypro.2014.08.038

Cited by 8 publications

(2 citation statements)

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“…Bifacial solar cells and modules can harvest light from both the front and rear side. Under appropriate conditions, a relative increase in p out between 10% and 20% is reported for bifacial modules compared to monofacial ones, mainly due to the gains from albedo illumination and the mounting of the modules …”

Section: Data For the Pspeer Solar Cells With The Highest Output Pmentioning

confidence: 99%

Bifacial p‐Type Silicon Shingle Solar Cells − the “pSPEER” Concept

et al. 2018

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Shingled interconnection of solar cells allows increased output power density pout by (i) increasing the active cell area within the module, (ii) decreasing shading losses, and (iii) reducing both series resistance per cell as well as interconnection losses. An additional increase in pout is possible by shingled interconnection using bifacial solar cells, allowing the light capture from the rear side as well. The “p‐type silicon shingled passivated edge, emitter, and rear (pSPEER)” solar cell concept introduced and examined in this work as an approach for fabrication of bifacial shingle solar cells is based on the passivated emitter and rear cell (PERC) concept. This article portrays bifacial pSPEER solar cells that are fabricated using industrial 6‐inch p‐type Czochralski‐grown silicon PERC precursors. After contact firing, the 6‐inch host wafers are separated by means of conventional laser scribing and manual mechanical cleaving into six pSPEER solar cells each with an area of 23 × 148 mm2. Current‐voltage measurements of these bifacial pSPEER solar cells with front side illumination yield peak pout,f = 20.4 mW cm−2 on a black background (total cell area, busbar included). For an irradiance of 1000 W m−2, this pout,f is equivalent to an energy conversion efficiency of 20.4%. By additional rear side illumination with an irradiance of 100 W m−2, peak pout = 21.5 mW cm−2 is obtained for these pSPEER solar cells.

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Section: Data For the Pspeer Solar Cells With The Highest Output Pmentioning

confidence: 99%

Bifacial p‐Type Silicon Shingle Solar Cells − the “pSPEER” Concept

et al. 2018

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“…Recent research on silicon solar cells has focused on improving the cell efficiency. [1][2][3][4][5][6][7][8] To increase the cell efficiency by suppressing rear-side carrier recombination, passivated emitter and rear contact (PERC) cells and passivated emitter and rear locally diffused (PERL) cells were developed. [9][10][11] PERC and PERL cells have local back surface field (BSF) on the rear side of the cell.…”

Section: Introductionmentioning

confidence: 99%

Laser doping of boron-doped Si paste for high-efficiency silicon solar cells

Tomizawa

Imamura

Soeda

et al. 2015

Jpn. J. Appl. Phys.

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Boron laser doping (LD) is a promising technology for high-efficiency solar cells such as p-type passivated locally diffused solar cells and n-type Siwafer-based solar cells. We produced a printable phosphorus-or boron-doped Si paste (NanoGram ® Si paste/ink) for use as a diffuser in the LD process. We used the boron LD process to fabricate high-efficiency passivated emitter and rear locally diffused (PERL) solar cells. PERL solar cells on Czochralski Si (Cz-Si) wafers yielded a maximum efficiency of 19.7%, whereas the efficiency of a reference cell was 18.5%. Fill factors above 79% and open circuit voltages above 655 mV were measured. We found that the boron-doped area effectively performs as a local boron back surface field (BSF). The characteristics of the solar cell formed using NanoGram ® Si paste/ink were better than those of the reference cell.

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