Improvements In Avalanche-Transistor Sweep Circuitry For Electro-Optic Streak Cameras

Thomas, S. W.; Griffith, R. L.; McDonald, W. R.

doi:10.1117/12.7973844

Cited by 2 publications

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“…To date, these high-voltage nanosecond ramps have been generated using avalanche transistors [4]. Avalanche transistors are difficult to use [5] because they lack (reproducibility, reliability and stability) and are nonlinear so external pulse shaping is needed.…”

Section: Introductionmentioning

confidence: 99%

“…Initially the electron beam is positioned off the screen, at the top, by the applied DC sweep plate voltages. After the sweep is completed, the electron beam is to be kept positioned off the screen at the bottom of the tube; this means that the ramps must be larger than 1.5 kV required for full deflection, To date, these high-voltage nanosecond ramps have been generated using avalanche transistors [4]. Avalanche transistors are ditlicult to use [5] because they lack (reproducibility, reliability and stability) and are nonlinear so external pulse shaping is needed.…”

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confidence: 99%

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Sweep circuit design for a picosecond streak camera

Baker¹,

Johnson²

1994

Meas. Sci. Technol.

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Abstract. A review of the operation of a streak camera is presented. This is followed by a discussion of measurement techniques with time resolutions on the order of 1 ps using the streak camera. A sweep circuit design is presented using power metal oxide semiconductor field effect transistors (MOSFETS). The sweep circuit generates two ramps of±2 kV in amplitude. With these ramps sweep times of less than 5 ns (125 ps mm-') to greater than 200 ns are achieved. The time-base variation is adjustable with a DC voltage provided by a front-panel potentiometer (knob) similar to an oscilloscope.

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Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

Sweep circuit design for a picosecond streak camera

Baker¹,

Johnson²

1994

Meas. Sci. Technol.

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Stacking power MOSFETs for use in high speed instrumentation

Baker

Johnson

1992

Review of Scientific Instruments

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A reliable circuit configuration is described for stacking power metal-oxide semiconductor field effect transistors (MOSFETs). The resulting circuit has a hold off voltage N times larger than a single power MOSFET, where N is the number of power MOSFETs used. The capability to switch higher voltages and thus greater amounts of power, into a 50 n load, in approximately the same time as a single device is realized. Design considerations are presented for selecting a power MOSFET. Using the design method presented, a 1.4 kV pulse generator, into SO n, with a 2 ns rise time and negligible jitter is designed.

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Improvements In Avalanche-Transistor Sweep Circuitry For Electro-Optic Streak Cameras

Cited by 2 publications

References 0 publications

Sweep circuit design for a picosecond streak camera

Sweep circuit design for a picosecond streak camera

Stacking power MOSFETs for use in high speed instrumentation

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