Improvements in Receiver RF Burnout Characteristics and Reduction of Post Overload Degradations in Low Noise GaAs FETs

Physical Limitations of Semiconductor Devices

“…Therefore, in [148][149][150][151][152][153] the breakdown characteristic under microwave signal has been studied. Even protect the device.…”

“…External signature of failure in a large-signal operation mode is damage of the structure between the gate and source [148,151], a formation [153] channel of local melting near the drain [149].…”