1985
DOI: 10.1063/1.336274
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Improvements in stoichiometry and stability of p-CuxS in thin-film CdS solar cells

Abstract: To counter the problem of instability, irreproducibility, and low stoichiometry of p-CuxS layers in thin-film CdS solar cells, a new field-assisted chemiplating process of barrier formation is described. Using the dc-forming potential as a first-order variable, nominal deviation from Cu2S composition without any dependence on external process parameters has been obtained. The stability of higher composition CuxS is attributed to the formation of a Cd++, rich barrier layer at the growing CuxS interface towards … Show more

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Cited by 10 publications
(8 citation statements)
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“…(14.26) by use of the triethylenetetramine masking agent, which reacts with Cu(II) and Cd(II). Al-Dhafiri and coworkers [120] showed that the phase of the Cu x S layers formed on CdS by dipping in a solution containing Cu ions can be controlled by applying a potential to the CdS substrate and that the most efficient photovoltaic cells made using this technique were produced when the CdS was biased in a narrow range between 0.01 and 0.02 V. It has been suggested that the applied bias affects the exchange of the Cd 2þ and Cu þ ions involved in the formation of the Cu x S by causing the formation of a Cd-rich layer at the Cu x S/CdS interface and preventing the diffusion of Cu þ ions deeper into the CdS [120][121][122]. In their earlier work Al-Dhafiri and coworkers [121] suggested that both substrate and postdeposition anneal play an important role in determining the stability of the CdS-Cu 2 S photovoltaic devices as well.…”
Section: Copper Sulfide (Cu 2 S)mentioning
confidence: 99%
“…(14.26) by use of the triethylenetetramine masking agent, which reacts with Cu(II) and Cd(II). Al-Dhafiri and coworkers [120] showed that the phase of the Cu x S layers formed on CdS by dipping in a solution containing Cu ions can be controlled by applying a potential to the CdS substrate and that the most efficient photovoltaic cells made using this technique were produced when the CdS was biased in a narrow range between 0.01 and 0.02 V. It has been suggested that the applied bias affects the exchange of the Cd 2þ and Cu þ ions involved in the formation of the Cu x S by causing the formation of a Cd-rich layer at the Cu x S/CdS interface and preventing the diffusion of Cu þ ions deeper into the CdS [120][121][122]. In their earlier work Al-Dhafiri and coworkers [121] suggested that both substrate and postdeposition anneal play an important role in determining the stability of the CdS-Cu 2 S photovoltaic devices as well.…”
Section: Copper Sulfide (Cu 2 S)mentioning
confidence: 99%
“…A strong research activity was focused on Cu x S during the 1980s in order to achieve large scale production of stable solar cell devices with CdS [4][5][6]. However, it practically stopped a few years later after lacking encouraging results.…”
Section: Introductionmentioning
confidence: 98%
“…Copper sulfide (Cu x S, x = 1−2) is well-known to form a wide variety of non-stoichiometric and mixed phases, of which at least five are known to be stable at room temperature: covellite (CuS) in the “sulfur-rich region”; and anilite (Cu 1.75 S), digenite (Cu 1.8 S), djurleite (Cu 1.95 S), and chalcocite (Cu 2 S) in the “copper-rich region” . Cu x S compounds in different stoichiometries have a wide range of well-established and prospective applications, for example, as p-type semiconductors, solar cells, superionic materials, and in many chemical sensing applications . Because of their unique optical and electrical properties, they are also widely applied as thin films , and composite materials. , Recently, Cu x S was demonstrated as a potential nanometer-scale switch …”
Section: Introductionmentioning
confidence: 99%
“…Cu x S compounds in different stoichiometries have a wide range of well-established and prospective applications, for example, as p-type semiconductors, solar cells, superionic materials, and in many chemical sensing applications . Because of their unique optical and electrical properties, they are also widely applied as thin films , and composite materials. , Recently, Cu x S was demonstrated as a potential nanometer-scale switch …”
Section: Introductionmentioning
confidence: 99%