IEEE Trans. Electron Devices
 2019
DOI: 10.1109/ted.2019.2931090
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Improvements in the Electrical Performance of IC MOSFET Components Using Diamond Layout Style Versus Traditional Rectangular Layout Style Calculated by Conformal Mapping

D. Barri
1
,
Patrik Vacula
2
,
Vlastimil Kote
3
et al.
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Cited by 2 publications
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MOSFETs’ Electrical Performance in the 160-nm BCD Technology Process With the Diamond Layout Shape

Barri
1
,
Vacula
2
,
Gresl
3
et al. 2020
IEEE Trans. Electron Devices
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MOSFETs’ Electrical Performance in the 160-nm BCD Technology Process With the Diamond Layout Shape

Barri
1
,
Vacula
2
,
Gresl
3
et al. 2020
IEEE Trans. Electron Devices
2
0
2
0
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Comparison of Measured Data Given by Automatized Measurement Methodology with the Analytical Expression of DLS MOSFET

Barri
1
,
Jakovenko
2
2020
2020 International Conference on Applied Electronics (AE)
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