Improvements in the reliability of a-InGaZnO thin-film transistors with triple stacked gate insulator in flexible electronics applications

We report on the determination of band offsets in rf-sputtered Aluminum Zinc Oxide (AZO)/single crystal β-Ga 2 O 3 (AZO/Ga 2 O 3) heterostructures using X-Ray Photoelectron Spectroscopy. The bandgaps of the materials were determined by Reflection Electron Energy Loss Spectroscopy as 4.6 eV for Ga 2 O 3 and 3.2eV for AZO. The valence band offset was determined to be-0.61eV ± 0.23eV, while the conduction band offset was determined to be-0.79 ± 0.34 eV. The AZO/Ga 2 O 3 system has a nested, or straddling, gap (type I) alignment and provides a convenient method for reducing contact resistance on Ga 2 O 3-based device structures.

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Tuning the electrical performance of metal oxide thin-film transistors via dielectric interface trap passivation and graded channel modulation doping

Yao

Liu

et al. 2017

J. Mater. Chem. C

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Improvements in the reliability of a-InGaZnO thin-film transistors with triple stacked gate insulator in flexible electronics applications

Cited by 8 publications

References 22 publications

Band offsets in sputtered Sc2O3/InGaZnO4 heterojunctions

Band offsets in sputtered Sc2O3/InGaZnO4 heterojunctions

Valence and conduction band offsets in AZO/Ga2O3 heterostructures

Tuning the electrical performance of metal oxide thin-film transistors via dielectric interface trap passivation and graded channel modulation doping

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