Improving Buried Interface Contact for Inverted Perovskite Solar Cells via Dual Modification Strategy

Abstract

The non‐wetting issue of the self‐assembled monolayer (SAM) layer can complicate subsequent perovskite deposition and impact device efficiency. This study addresses this challenge using a dual approach involving co‐self‐assembly and a buffer layer to enhance the wettability and interfacial contact of the buried perovskite film. A weakly acidic boronic acid derivative, 4‐N, N‐dimethylbenzeneboronic acid hydrochloride (4NPBA), is used to co‐self‐assemble with the regular SAM molecule on ITO and the subsequent FAI buffer layer further increased perovskite film coverage to 89%. This dual buried interface strategy—SAM‐4NPBA/FAI—results in a flat and dense perovskite interface. The optimized device demonstrates a high fill factor of 88.35%, a power conversion efficiency of 25.29%, and retains over 99% of its initial efficiency after 500 h of maximum power point testing.