2019
DOI: 10.1002/solr.201900147
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Improving Carbon Nanotube‐Silicon Solar Cells by Solution Processable Metal Chlorides

Abstract: Carbon nanotube‐silicon (CNT‐Si) solar cells have the potential of being an alternative to the expensive crystal Si solar cells; however, there are critical limitations, such as the relatively low efficiency, instability, and lack of systematic improvement techniques. Herein, by investigating 17 solution processable, nonprecious metal chlorides, it is shown that appropriate chlorides can significantly improve the behavior of CNT‐Si solar cells individually or as mixtures. The results reveal a close relationshi… Show more

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Cited by 19 publications
(20 citation statements)
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“…Electrochemical impedance spectroscopy (EIS) measurements were performed to evaluate carrier recombination at the SWCNT/Si interface. 14,36 As shown in Fig. 5f, all the curves are near semicircles, which suggests that there is only a single junction at the interface.…”
Section: Resultsmentioning
confidence: 76%
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“…Electrochemical impedance spectroscopy (EIS) measurements were performed to evaluate carrier recombination at the SWCNT/Si interface. 14,36 As shown in Fig. 5f, all the curves are near semicircles, which suggests that there is only a single junction at the interface.…”
Section: Resultsmentioning
confidence: 76%
“…However, the FeCl 3 doping significantly improved the conductivity of the hybrid film. It is well known that metal chlorides can functionalize both SWCNTs 14 and GO films. 23 We also compared the I – V curves of FeCl 3 –SWCNT and FeCl 3 –GO–SWCNT films.…”
Section: Resultsmentioning
confidence: 99%
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“…It is evident that both the minimum and maximum minority carrier lifetimes are increased for the SnCl 2 -treated case with an average τ of 59.0 μs, much longer than the corresponding value of 27.3 μs for the control case. Because these samples have the similar bulk lifetimes and wafer thicknesses, the prolonged τ together with the increased R rec thus well indicates the suppressed recombination for carriers at the interface between the Ti 3 C 2 T x MXene layer and n-Si substrate [58].…”
Section: Resultsmentioning
confidence: 86%
“…[ 2–6 ] With this architecture device power conversion efficiency (PCE) has steadily increased over the past decade from the preliminary work of Wei et al, [ 7 ] who reported 1.4% for a 0.49 cm 2 active area, to works from Jia et al, [ 2 ] Shi et al, [ 8 ] and the team around Maruyama, [ 9 ] reporting 13.8%, 15.1%, and 14.1%, respectively, for ≈0.01 cm 2 active areas. Notably, in 2014 Wang et al [ 10 ] reported a power conversion efficiency of 17% but over an area of 0.008 cm 2 , and in 2019 Wu et al [ 11 ] achieved 16.2% for 0.81 cm 2 . In our most recent work, we communicated the obtainment of 17.2% and 15.5% for 1 and 5 cm 2 active areas, respectively.…”
Section: Introductionmentioning
confidence: 99%