2016
DOI: 10.1007/s13391-016-5452-3
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Improving charge transport of P3HT:PCBM organic solar cell using MoO3 nanoparticles as an interfacial buffer layer

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Cited by 23 publications
(6 citation statements)
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“…MoO 3 is adequate to attain a high built-in potential and V oc because it can suppress interfacial reactions at the HTL/BHJ interface. MoO 3 nanoparticles (NPs) can be added at the interface between the active layer and the PEDOT:PSS to take advantage of the localized surface-resonance plasmon (LSRP) effect of NPs and the electronic structure of MoO 3 [ 96 ]. MoO 3 NPs increased the path length of the absorbed light and blocked the electrons flow to the anode, resulting in a higher J sc and FF, and thus a PCE of 4.11% was reached over a long period of 30 days [ 97 ].…”
Section: Hole-transporting Materials As Htls In Oscsmentioning
confidence: 99%
“…MoO 3 is adequate to attain a high built-in potential and V oc because it can suppress interfacial reactions at the HTL/BHJ interface. MoO 3 nanoparticles (NPs) can be added at the interface between the active layer and the PEDOT:PSS to take advantage of the localized surface-resonance plasmon (LSRP) effect of NPs and the electronic structure of MoO 3 [ 96 ]. MoO 3 NPs increased the path length of the absorbed light and blocked the electrons flow to the anode, resulting in a higher J sc and FF, and thus a PCE of 4.11% was reached over a long period of 30 days [ 97 ].…”
Section: Hole-transporting Materials As Htls In Oscsmentioning
confidence: 99%
“…Thermally evaporated WO 3 has displayed high thermal stability in inverted PSCs. 21 Although a few studies have demonstrated the use of solution-processed MoO 3 in the production of efficient inverted and conventional PSCs, 26–29 processing solution-processed MoO 3 HTLs remains challenging and there have been few investigations of their stability.…”
Section: Introductionmentioning
confidence: 99%
“…The literature also reports a couple of approaches where a double anodic buffer layer has been applied to inverted cells. Kim et al describe an inverted ITO/ZnO/P3HT:PCBM/MoO 3 np/PEDOT:PSS/Ag cell, exhibiting decreased charge recombination and a 4.11% PCE compared with 3.70% without MoO 3 np layer . However, due to the good adaptability of P3HT:PCBM to any anode buffer material, the advantage arising from the additional MoO 3 np layer is not so determinant in this case.…”
Section: Introductionmentioning
confidence: 99%