Improving crystalline quality of sputtering-deposited MoS₂ thin film by postdeposition sulfurization annealing using (t-C₄H₉)₂S₂

Abstract

A sputtered MoS2 thin film is a candidate for realizing enhancement-mode MoS2 metal–oxide–semiconductor field-effect transistors (MOSFETs). However, there are some sulfur vacancies in the film, which degrade the device performance. In this study, we performed postdeposition sulfurization annealing (PSA) on a sputtered MoS2 thin film in order to complement sulfur vacancies, and we investigated the fundamental properties of the MoS2 film. As a result, a high-quality crystalline 10-layer MoS2 film with an ideal stoichiometric composition was obtained at a relatively low process temperature (500 °C). The MoS2 film had an indirect bandgap of 1.36 eV and a high Hall mobility compared with the as-deposited sputtered MoS2 film.

Anisotropy and Domain Structure in Nanoscale-Thick MoS2/CoFeB Heterostructures: Implications for Transition Metal Dichalcogenide-Based Thin Films

“…Raman spectra of samples M1 and M2 are shown in Figure . Sample M2 exhibits Raman peaks corresponding to in-plane ( E 2 g 1 ) and out-of-plane ( A 1 g ) characteristic vibrational modes for MoS 2 at ∼382 and 408 cm –1 , respectively. − The detailed Raman spectra analysis for similar MoS 2 samples can be found in the Supporting Information. Angle dependence of magnetic hysteresis loops and domain images captured at coercive field for sample M0 are shown in Figure .…”

Determining the Electronic Structure and Thermoelectric Properties of MoS2/MoSe2 Type‐I Heterojunction by DFT and the Landauer Approach

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an on-off ratio of about 10 8 , [5] electron mobilities between 30 cm −2 V −1 s −1 and 200 cm −2 V −1 s −1 , [6] and a layered nature that allows new functionality by merging atomically thin parts of distinct materials. In addition, Van der Waals heterojunctions made of TMD are the subject of intense research [7][8][9][10][11] as an attractive way to tune the electronic performance of devices.

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Phase control of sputter-grown large-area MoTe2 films by preferential sublimation of Te: amorphous, 1T′ and 2H phases

“…Furthermore, particularly for sulfides, additional S must be supplied to compensate for the evaporation of S during the annealing process as S readily evaporates at the elevated temperatures used. 14 Moreover, understanding the crystallization behavior of amorphous films is important not only for fundamental science but also for applications as can be seen in the progress of chalcogenide-based phasechange materials used in rewritable optical discs and non-volatile memory devices that were accelerated by pioneering work regarding the understanding of the switching mechanism of the wellknown phase-change material Ge 2 Sb 2 Te 5 . 15 We focus on the crystallization mechanism occurring in Mo-Te films.…”