Improving Current Density of 4H–SiC Junction Barrier Schottky Diode with Wide Trench Etching

Kyoung, Sinsu; Jung, Eun Sik; Kang, Tai Young; Sung, Man Young

doi:10.1166/jnn.2016.13574

Cited by 2 publications

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“…6 illustrates the decrease in Schottky barrier heights and the increase in the ideality factor with decreasing temperature. Such temperature dependence is an obvious disagreement from conventional TE theory and SiC SBD analogy [18,19].…”

Section: Resultsmentioning

confidence: 87%

“…Aluminum (Al) is traditionally used as Schottky contact because it has a low SBH that results in a low forward voltage drop. However, Al/4H-SiC SBDs under forward and reverse bias often show undesirable I-V characteristics that reveal significant variations of both the barrier height (BH) and ideality factor with temperature [18,19]. Various studies for the origin of such divergence has been proposed by taking into consideration of the interface state density distribution [20], the image-force lowering [21], the recombination and quantum-mechanical tunneling [22,23], and the distinctive high level of TFE [24], as well as the lateral distribution of BH inhomogeneities [25,26], influence the device current capabilities [27,28].…”

Section: Resultsmentioning

confidence: 99%

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Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes

Ziko

Koel

Rang

et al. 2020

MSF

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The diffusion welding (DW), known as direct bonding technique could be more used as an alternative approach to develop silicon carbide (SiC) Schottky rectifiers to existing mainstream metallization contact technologies. Measured results for p-type 4H-SiC Schottky barrier diodes (SBD) arepresented. And comprehensive numerical study to characterize the device has been performed. The simulations are carried out with ATLAS software (Silvaco). The measured and numerically simulated forward current-voltage (I–V) and capacitance-voltage (C–V) characteristics in a large temperaturerange are analyzed. Some of the measured p-type 4H-SiC Schottky diodes show deviation in specific ranges of their electrical characteristics. This deviation, especially due to excess current, dominates at low voltages (less than 1 V) and temperatures (less than room temperature). To verify the existence of electrically active defects under the Schottky contact, which influences the Schottky barrier height (SBH) and its inhomogeneity, the deep level transient spectroscopy (DLTS) technology was applied. DLTS measurements show the presence of a deep-level defect with activation energy corresponding typically for multilevel trap clusters.

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Section: Resultsmentioning

confidence: 87%

Section: Resultsmentioning

confidence: 99%

Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes

Ziko

Koel

Rang

et al. 2020

MSF

View full text Add to dashboard Cite

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SiC Trenched Schottky Diode with Step-Shaped Junction Barrier for Superior Static Performance and Large Design Window

Wang

et al. 2020

MSF

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A novel silicon carbide (SiC) trenched schottky diode with step-shaped junction barrier is proposed for superior static performance and large design window. In the proposed diode, to improve tradeoff between specific on-resistance and surface peak electric field, the shape of the trenched-junction is modified to stair-step, without extra fabrication process. To investigate the performances of the SiC step-shaped trenched junction barrier schottky (SSTJBS) diode, numerical simulations are carried out through Silvaco TCAD. The results indicate that the proposed diode can accommodate highly doped drift region with no degradation of its reverse blocking characteristic. In comparison with the conventional SiC trenched junction barrier schottky (TJBS) diode, the proposed SiC SSTJBS diode shows a larger design window of drift region doping concentration from 7.9×1015cm-3 to 9.5×1015cm-3. In the design window, the specific on-resistance and surface peak electric field can be reduced by 12.9% and 11%, respectively.

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Improving Current Density of 4H–SiC Junction Barrier Schottky Diode with Wide Trench Etching

Cited by 2 publications

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Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes

Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes

SiC Trenched Schottky Diode with Step-Shaped Junction Barrier for Superior Static Performance and Large Design Window

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