Improving dry etch control for contact plugs in advanced DRAM manufacturing

Bao, Tianming; Bar, Yuval; Fong, David; Godbole, M. J.

doi:10.1117/12.770789

Cited by 3 publications

(1 citation statement)

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“…4 Anisotropy of the dry etch process can be achieved and is useful for mesa definition. 5 Anisotropic dry etching is used in device isolation, 6 in modern DRAM capacitor, 7 and in power device fabrication. 8 Reactive ion etching (RIE) is most commonly used during semiconductor device fabrication as it allows both physical and plasma etching simultaneously.…”

Section: Introductionmentioning

confidence: 99%

Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2

Wongwanitwattana¹,

Shah²,

Myronov³

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The impact of the O 2 content in SF 6 -O 2 gas mixtures on the etch rate and sidewall profile of silicon (Si), germanium (Ge), and phosphorous doped germanium (Ge:P) in reactive ion etching has been studied. The characteristics of etch rate and sidewall profile are greatly affected by the O 2 content. Below 50% of O 2 content, a large variation in Ge etch rates is found compared to that of Si, but for O 2 content above 50% the etch rates follow relatively the same trend. Lightly doped Ge shows the highest etch rate at a O 2 concentration up to 20%. Sidewall angles range from a minimum of 80 to a maximum of 166 , with O 2 concentration of 20% yielding perfect anisotropic mesa etch. Also at this O 2 concentration, reasonable Si/Ge selectivity is possible. These observations indicate that by adjusting the O 2 concentration, precision plasma etching of Si, Ge, and Ge:P is possible.

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Section: Introductionmentioning

confidence: 99%

Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2

Wongwanitwattana¹,

Shah²,

Myronov³

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Virtual Metrology for Etch Profile in Silicon Trench Etching With SF₆/O₂/Ar Plasma

Choi

Park

Lee

et al. 2022

IEEE Trans. Semicond. Manufact.

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Feasibility study on 3-D shape analysis of high-aspect-ratio features using through-focus scanning optical microscopy

Attota¹,

Weck

Kramar³

et al. 2016

Opt. Express

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In-line metrologies currently used in the semiconductor industry are being challenged by the aggressive pace of device scaling and the adoption of novel device architectures. Metrology and process control of three-dimensional (3-D) high-aspect-ratio (HAR) features are becoming increasingly important and also challenging. In this paper we present a feasibility study of through-focus scanning optical microscopy (TSOM) for 3-D shape analysis of HAR features. TSOM makes use of 3-D optical data collected using a conventional optical microscope for 3-D shape analysis. Simulation results of trenches and holes down to the 11 nm node are presented. The ability of TSOM to analyze an array of HAR features or a single isolated HAR feature is also presented. This allows for the use of targets with area over 100 times smaller than that of conventional gratings, saving valuable real estate on the wafers. Indications are that the sensitivity of TSOM may match or exceed the International Technology Roadmap for Semiconductors (ITRS) measurement requirements for the next several years. Both simulations and preliminary experimental results are presented. The simplicity, lowcost, high throughput, and nanometer scale 3-D shape sensitivity of TSOM make it an attractive inspection and process monitoring solution for nanomanufacturing.

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Improving dry etch control for contact plugs in advanced DRAM manufacturing

Cited by 3 publications

References 0 publications

Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2

Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2

Virtual Metrology for Etch Profile in Silicon Trench Etching With SF₆/O₂/Ar Plasma

Feasibility study on 3-D shape analysis of high-aspect-ratio features using through-focus scanning optical microscopy

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